TMACS I/O termination point listing. Revision 1 (open access)

TMACS I/O termination point listing. Revision 1

This document provides a listing of all analog and discrete input/output (I/O) points connected to the Tank Monitor and Control System (TMACS). The list also provides other information such as the point tag name, termination location, description, drawing references and other parameters. The purpose is to define each point`s unique tag name and to cross reference the point with other associated information that may be necessary for activities such as maintenance, calibration, diagnostics, or design changes. It provides a list in one document of all I/O points that would otherwise only be available by referring to all I/O termination drawings.
Date: September 13, 1994
Creator: Scaief, C. C., III
Object Type: Report
System: The UNT Digital Library
Tank farm instrumentation and data acquisition/management upgrade plan (open access)

Tank farm instrumentation and data acquisition/management upgrade plan

This plan provides the strategy, implementation, and schedule for upgrading tank farm instrumentation, data acquisition and data management. The focus is on surveillance parameters to verify and maintain tank safety. The criteria do not necessarily constitute mandatory requirements but are based upon engineering judgement and best available information. Schedules reflect preliminary funding for FY95. For out years they are best engineering judgment.
Date: September 13, 1994
Creator: Scaief, C. C., III
Object Type: Report
System: The UNT Digital Library
W and WSi(x) Ohmic Contacts on p- And n-Type GaN (open access)

W and WSi(x) Ohmic Contacts on p- And n-Type GaN

W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range are obtained for WSiX on Si-implanted GaN with a peak doping concentration of- 5 x 1020 cm-3, after annealing at 950 `C. On p-GaN, leaky Schottky diode behavior is observed for W, WSiX and Ni/Au contacts at room temperature, but true ohmic characteristics are obtained at 250 - 300 *C, where the specific contact resistances are typically in the 10-2 K2-cm2 range. The best contacts for W and WSiX are obtained after 700 *C annealing for periods of 30- 120 sees. The formation of &WzN interracial phases appear to be important in determining the contact quality.
Date: October 13, 1998
Creator: Abernathy, C. R.; Cao, X. A.; Eizenberg, M.; Han, J.; Lothian, J. R.; Pearton, S. J. et al.
Object Type: Article
System: The UNT Digital Library
Texas Pecan Pest Management Newsletter, Volume 94, Number 5, June 1994 (open access)

Texas Pecan Pest Management Newsletter, Volume 94, Number 5, June 1994

Newsletter focusing on pecan disease and pest control in Texas, including prevention, identification, treatment, and educational opportunities.
Date: June 13, 1994
Creator: Texas Agricultural Extension Service
Object Type: Journal/Magazine/Newsletter
System: The Portal to Texas History