A careful study of a specially formed thin silicon layer on TiB/sub 2/-coated sapphire reveals that the interaction layer of TiSi/sub 2/ is composed of larger grains. Processing steps were developed which lead closer to the goal of fabricating polycrystalline silicon photovoltaic devices completely by vacuum deposition. Both n-type and p-type silicon are now being deposited. New deposition masks were made for depositing the n-regions upon the p-layers. New electrode deposition masks were also made for a direct electroding process to replace the photolithographic process used previously. The TiB/sub 2/ bottom electrode fabrication has been achieved in a single vacuum chamber. Reaction constants and activation energy for TiB/sub 2/ layer formation were determined to be less than those reported by other authors for bulk material. Studies of crystallite growth and interfacial interactions have continued. Major sources of undesirable impurities have been identified and removed from the vacuum chambers. The changes made this quarter have not been incorporated into a completed photovoltaic device.

The purpose of this handbook is to assist in understanding the various procedures and requirements necessary for the development of geothermal energy in the State of Arizona. It contains the names of key persons and agencies who are directly or indirectly involved in the institutional process. A detailed assessment of all agencies and the role they play in geothermal energy development is provided. The handbook is divided into four sections: State and Local rules and regulations, the Federal rules and regulations, references, and a technical bibliography. (MHR)