Several reactions producing odd-Z transactinide compound nuclei were studiedwith the 88-Inch Cyclotron and the Berkeley Gas-Filled Separator at the LawrenceBerkeley National Laboratory. The goal was to produce the same compound nucleus ator near the same excitation energy with similar values of angular momentum via differentnuclear reactions. In doing so, it can be determined if there is a preference in entrancechannel, because under these experimental conditions the survival portion of Swiatecki, Siwek-Wilcznska, and Wilczynski's"Fusion By Diffusion" model is nearly identical forthe two reactions. Additionally, because the same compound nucleus is produced, theexit channel is the same. Four compound nuclei were examined in this study: 258Db, 262Bh, 266Mt, and 272Rg. These nuclei were produced by using very similar heavy-ion induced-fusion reactions which differ only by one proton in the projectile or target nucleus (e.g.: 50Ti + 209Bi vs. 51V + 208Pb). Peak 1n exit channel cross sections were determined for each reaction in each pair, and three of the four pairs' cross sections were identical within statistical uncertainties. This indicates there is not an obvious preference of entrancechannel in these paired reactions. Charge equilibration immediately prior to fusionleading to a decreased fusion barrier is the likely cause of this phenomenon. In addition …

Nuclear reaction study with radioactive ion beams is one of the most exciting research topics in modern nuclear physics. The development of radioactive ion beams has allowed nuclear scientists and engineers to explore many unknown exotic nuclei far from the valley of nuclear stability, and to further our understanding of the evolution of the universe. The recently developed radioactive ion beam facility at the Lawrence Berkeley National Laboratory's 88-inch cyclotron is denoted as BEARS and provides {sup 11}C, {sup 14}O and {sup 15}O radioactive ion beams of high quality. These moderate to high intensity, proton-rich radioactive ion beams have been used to explore the properties of unstable nuclei such as {sup 12}N and {sup 15}F. In this work, the proton capture reaction on {sup 11}C has been evaluated via the indirect d({sup 11}C, {sup 12}N)n transfer reaction using the inverse kinematics method coupled with the Asymptotic Normalization Coefficient (ANC) theoretical approach. The total effective {sup 12}N {yields} {sup 11}C+p ANC is found to be (C{sub eff}{sup 12{sub N}}){sup 2} = 1.83 {+-} 0.27 fm{sup -1}. With the high {sup 11}C beam intensity available, our experiment showed excellent agreement with theoretical predictions and previous experimental studies. This study also indirectly confirmed …

The total K/sup +/-p cross section was measured at the three K/sup +/- meson energies 175 er inch per 25, 225 er inch per 25, and 275 er inch per 25 Mev and the differential scattering cross section was measured at 225 Mev. The K/sup +/-p nuclear force was shown to be repulsive from the observed constructive interference with Coulomb scattering. The differential c=oss section was otherwise isotropic and could arise from either pure S-wave or pure P- wave scattering. Subtracted dispersion relations were applied to these data and the rest of the available K proton scattering data. The statistical errors on the data were found to be too large to determine the K-hyperon relative parity. However, if the K DELTA and K SIGMA relative parities are assumed to be the same, then if the coupling were scalar, the coupling constant g/sup 2/4 pi would be less than 0.6; if pseudoscalar, less than 10. (auth)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self- and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of future electronic Si devices, where the nanometer-scale …

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