We have characterized the response of the negative resist SAL605 in the extreme ultraviolet ({lambda}=13 nm). The sensitivity was found to be {approx}1 mJ/cm{sup 3} for all conditions studied. We have identified processing conditions leading to high ({gamma}{gt}4) contrast. The resist response was modeled using Prolith/2 and the development parameters were obtained from the exposure curves.

The distribution of scattered light at the image plane of an extreme ultraviolet lithography (EUVL) system was measured, in situ. These measurements revealed a significant degradation of the modulation transfer function of the imaging optic, relative to its value in the absence of scattering.

Performance of an Extreme Ultraviolet Lithography (EUVL) imaging optic was characterized by printing resolution test images in resist. While features as small as 0.137 {mu}m were successfully printed, a resolution of 0.175 {mu}m better represents the performance of the system over the full 0.9 mm{sup 2} image field. The contrast of the aerial image was estimated to be about 40% or less for the fine features printed. This low contrast value is attributed to a degradation of the modulation transfer function due to presence of scattered light in the image.

We report progress in the aspherization of precision optical substrates via deposition of graded period Mo/Si multilayer coatings using a masking technique. These preliminary results show good agreement between the measured and desired thickness profiles over 85% of the sample, however, thickness deviations of up to 7 % are observed in the central area. The errors are attributed to misalignments of the mask relative to the substrate during deposition.