Natural frequency analysis of the BIPS (open access)

Natural frequency analysis of the BIPS

A dynamic model was set up to determine the fundamental frequencies of the BIPS. The model consists of a radiator which supports four discrete masses by means of interface structures. Various materials and several different sizes of interface structures were used in the analysis. The fundamental frequencies vary from 38 cps to 227 cps dependent upon the material and the size of interface structure. The built-in strength of all the interface structures are in excess of the 25 g's limit loading criteria.
Date: April 8, 1976
Creator: Yang, S.
System: The UNT Digital Library
High temperature electronics status report, 1974--1975. [GaP and SiC semiconductors for operation at 500/sup 0/C] (open access)

High temperature electronics status report, 1974--1975. [GaP and SiC semiconductors for operation at 500/sup 0/C]

The objective of the High Temperature Electronics Program is the assembly and/or development of the technologies necessary for the fabrication of measurement and communications electronics operative in a 500/sup 0/C ambient. It is anticipated that the technology will be developed to the level required to demonstrate medium scale integrated circuits. Basic electronic properties, structures, and fabrication technology for gallium phosphide and silicon carbide devices are presented. (TFD)
Date: April 8, 1976
Creator: Blum, A.
System: The UNT Digital Library
Evaluation of selected chemical processes for production of low-cost silicon. Second quarterly progress report, December 15, 1975--March 31, 1976 (open access)

Evaluation of selected chemical processes for production of low-cost silicon. Second quarterly progress report, December 15, 1975--March 31, 1976

Plant construction costs and manufacturing costs have been estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. The objective was to evaluate the economics of the zinc reduction process and to determine whether any of the potential economies in the modifications of the iodide process would make it competitive in spite of the high relative cost of recycled iodine in the process intermediate. The estimated cost of the zinc reduction process, $9.12 kg/sup -1/ silicon is within the target of $10.00 kg/sup -1/; however, none of the modifications of the iodide processes yielded costs below $20 kg/sup -1/ Si. Although optimization of one of the iodide process modifications should bring the cost to below $20 kg/sup -1/ Si, it would not be possible to reduce the cost to below that of the zinc reduction product. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay …
Date: April 8, 1976
Creator: Blocher, J. M., Jr.; Browning, M. F.; Wilson, W. J. & Carmichael, D. C.
System: The UNT Digital Library