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Observations on the Response of Two P-NJunction Diodes to Protons
The response of a two silicon p-n junction diodes has been measured for protons up to 13.3 Mev. In one case the dependence of depletion layer thickness with bias voltage was found to be T or V(0.46). The observed resolution, made up of contributions from crystal noise, beam width, and scatterer thickness, was about 1% for 9-Mev protons.
Date:
November 22, 1960
Creator:
Benveniste, J.; Booth, R. & Mitchell, A. C.
System:
The UNT Digital Library