Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors (open access)

Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.
Date: November 1985
Creator: Haegel, Nancy Marie
System: The UNT Digital Library
Field investigation of keyblock stability (open access)

Field investigation of keyblock stability

Discontinuities in a rock mass can intersect an excavation surface to form discrete blocks (keyblocks) which can be unstable. This engineering problem is divided into two parts: block identification, and evaluation of block stability. One stable keyblock and thirteen fallen keyblocks were observed in field investigations at the Nevada Test Site. Nine blocks were measured in detail sufficient to allow back-analysis of their stability. Measurements included block geometry, and discontinuity roughness and compressive strength. Back-analysis correctly predicted stability or failure in all but two cases. These two exceptions involved situations that violated the stress assumptions of the stability calculations. Keyblock faces correlated well with known joint set orientations. The effect of tunnel orientation on keyblock frequency was apparent. Back-analysis of physical models successfully predicted block pullout force for two-dimensional models of unit thickness. Two-dimensional (2D) and three-dimensional (3D) analytic models for the stability of simple pyramidal keyblocks were examined. Calculated stability is greater for 3D analyses than for 2D analyses. Calculated keyblock stability increases with larger in situ stress magnitudes, larger lateral stress ratios, and larger shear strengths. Discontinuity stiffness controls block displacement more strongly than it does stability itself. Large keyblocks are less stable than small ones, and stability …
Date: April 1, 1985
Creator: Yow, J. L., Jr.
System: The UNT Digital Library