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Low-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si (open access)

Low-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si

This article explores Ultraviolet (UV) photoluminescence (PL) data taken on a double Au implanted Si matrix and studied over a wide temperature range of 28-220K. The results of this study at lower temperatures indicate the emission to be coming from Si nanoclusters (NCs) embedded in the matrix.
Date: April 3, 2012
Creator: Sahu, G.; Lenka, H.P.; Mahapatra, Durga P.; Rout, B. & Das, M.P.
System: The UNT Digital Library