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Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe
Article describes study investigating spin Hall effect (SHE) in two prototypical Ferroelectric Rashba semiconductors (FERSCs), GeTe and SnTe, and show that it can be large either in ferroelectric or paraelectric structure.
Date:
January 24, 2020
Creator:
Wang, Haihang; Gopal, Priya; Picozzi, Silvia; Curtarolo, Stefano; Buongiorno Nardelli, Marco & Sławińska, Jagoda
System:
The UNT Digital Library