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Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer
Article describes an experiment in which a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer was fabricated, and compares it's interfacial and electrical properties with those of its counterparts that have not undergone passivation treatment.
Date:
October 21, 2019
Creator:
He, Gang; Wang, Die; Ma, Rui; Liu, Mao & Cui, Jingbiao
System:
The UNT Digital Library