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Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing
This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.
Date:
March 2, 2019
Creator:
Pullano, Salvatore Andrea; Tasneem, Nishat Tarannum; Mahbub, Ifana; Shamsir, Samira; Greco, Marta; Islam, Syed Kamrul et al.
System:
The UNT Digital Library