Scratch recovery is a desirable property of many polymer systems. The reason why some materials have demonstrated excellent scratch recovery while others do not has been a mystery. Explaining the scratch resistance based upon the hardness of a material or its crosslink density is incorrect. In this thesis, novel polymers were tested in an attempt to discover materials that show excellent scratch recovery - one of the most important parameters in determining the wear of a material. Several hypotheses were developed in an attempt to give an accurate picture of how the chemical structure of a polymer affects its scratch recovery. The results show that high scratch recovery is a complex phenomenon not solely dependent upon the presence of electronegative atoms such as fluorine.

Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.