The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process …

The M-shell x-ray production cross section for thorium and uranium have been determined for protons of energy 0.4 - 4.0 MeV, helium ions of energy 0.4 - 6.0 MeV, carbon ions of energy 4.5 - 11.3 MeV and oxygen ions of energy 4.5 - 13.5 MeV. The total cross sections and the cross sections for individual x-ray peaks in the spectrum, consisting of the following transitions Mz (M4-N2, M5-N3, M4-N3), Ma (M5-N6,7), Mb (M4-N6, M5-O3, M4- O2), and Mg (M4-O3, M5-P3, M3-N4, M3-N5), were compared to the theoretical values determined from the PWBA + OBKN and ECUSAR. The theoretical values for the carbon and oxygen ions were also modified to take into account the effects of multiple ionizations of the target atom by the heavier ions. It is shown that the results of the ECUSAR theory tend to provide better agreement with the experimental data.