High entropy alloys (HEAs) are a new class of solid solution alloys that contain multiple principal elements and possess excellent mechanical properties, from corrosion resistance to fatigue and wear resistance. Even more recently, twinning induced plasticity (TWIP) and transformation induced plasticity (TRIP) non-equiatomic high entropy alloys have been engineered, promising increased strength and ductility as compared to their equiatomic counterparts. However, impact and fracture resistance of these HEAs has not been studied as much as their other mechanical properties. In this thesis, the hardness, tensile properties, and Charpy impact energy of Al0.3CoCrFeNi, a TWIP HEA, and 50Fe-30Mn-10Co-10Cr (at.%), a TRIP HEA, was explored. First, three processing conditions, (1) as-received, (2) recrystallized, and (3) peak hardness, were chosen for each alloy and verified with Vickers microhardness measurements. Next, the tensile properties of each alloy and condition were investigated. Charpy impact specimen size was then selected based on the final plate thickness, and the machined samples were tested. Plastic zone size and change in sample thickness in the deformed region of each condition after testing was measured. Post-impact test inspection of the samples in all conditions showed that the samples were in tension near the V-notch root and in compression at the …

High entropy alloys (HEAs) are a relatively new class of solid solution alloys that contain multiple principal elements to take advantage of their high configurational entropy, sluggish diffusion, lattice distortion, and the cocktail effect. In recent development, work hardening mechanisms known as twinning induced plasticity (TWIP) and transformation induced plasticity (TRIP) have been found active in Al0.3CoCrFeNi (molar fraction) and Fe50Mn30Co10Cr10 (at %) HEA compositions. Friction-stir processing was done to increase the mechanical properties and improve the microstructure of the alloys for the purpose of high strain rate performance. Quasi-static tensile tests as well as top-hat geometry Split-Hopkinson pressure bar tests were conducted to view the mechanical properties as well as view the microstructural evolution at dynamic strain rates. Overall, the Al0.3CoCrFeNi condition after friction-stir processing and heat treatment has proved to have the best mechanical properties, and selecting from the conditions in this study, Al0.3CoCrFeNi has better shear localization resistance.

Sintering parameter effects on the microstructure of boron carbide and boron carbide/titanium diboride composites are investigated. The resulting microstructure and composition are characterized by scanning electron microscopy (SEM), x-ray microscopy (XRM) and x-ray diffraction (XRD). Starting powder size distribution effects on microstructure are present and effect the mechanical properties. Reactive spark plasma sintering introduces boron nitride (BN) intergranular films (IGF's) and their effects on fracture toughness, hardness and flexural strength are shown. Mechanical testing of Vickers hardness, 3-point bend and Chevron notch was done and the microstructural effects on the resulting mechanical properties are investigated.

Recent progress in layered transition metal dichalcogenides (TMDs) has led to various promising electronic and optoelectronic applications. However, the structure of materials plays a critical role in electronic and optoelectronic devices, and determines performance. Electronic and optoelectronic devices typically consist of multiple layers that form electrical homojunctions or heterojunctions. Therefore, in a device it can be expected that a WS2 layer may serve as the substrate for a subsequent layer in a multilayer device stack and determine how the layer grows. In transistor structures, roughness at the channel/gate dielectric interface introduces field variations and charge scattering. Therefore, understanding the relations between processing, surface morphology and properties is important. In this project, the effects of pulsed laser deposition (PLD) processing conditions on the surface morphology of few layered WS2 films were studied. WS2 films were synthesized under processing conditions that represent the extremes of surface supersaturation and kinetic energy transfer from the flux to the growing films, and evolution of the surface morphology was studied. The specific conditions were 1Hz/50mJ, 10Hz/50mJ, 1Hz/300mJ, and 10Hz/300mJ respectively. Combining AFM, XRD and Raman analyses, it was determined that deposition at 10Hz/300mJ, provided the best structural properties and surface morphology. Growth appeared to be 3D-cluster, …

Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annealing treatments in hydrogen ambient normally involve passivation of traps at thermal SiO2/Si interfaces by hydrogen. High-κ dielectric films are believed to exhibit significantly higher charge trapping affinity than SiO2. In this thesis, study of hydrogen trapping in alternate gate dielectric candidates such as HfO2 during annealing in hydrogen ambient is presented. Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were used to characterize these thin dielectric materials. It was demonstrated that hydrogen trapping in bulk HfO2 is significantly reduced for pre-oxidized HfO2 prior to forming gas anneals. This strong dependence on oxygen pre-processing is believed to be due to oxygen vacancies/deficiencies and hydrogen-carbon impurity complexes that originate from organic precursors used in …

Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.

Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma processing. Several techniques have been suggested to mitigate process damage but supercritical silylation offers a rapid single repair step solution to this problem. Different ash and etch damaged samples were employed in this study to optimize an effective method to repair the low-k dielectric material and seal the surface pores via supercritical fluid processing with various trialkylchlorosilanes. Fourier transform infrared spectroscopy (FTIR), contact angle, capacitance- voltage measurements, and x-ray photoemission spectroscopy, dynamic secondary ion mass spectroscopy (DSIMS), characterized the films. The hydrophobicity and dielectric constant after exposure to elevated temperatures and ambient conditions were monitored and shown to be stable. The samples were treated with a series of silylating agents of the form R3-Si-Cl where R is an alkyl groups (e.g. ethyl, propyl, isopropyl). Reactivity with the surface hydroxyls was inversely …

Recent commercial developments have created a need for alternative materials and methods for imparting oil/grease resistance to paper and/or paperboard used in packaging. The performance of a novel grease resistant functional coating comprised of polyvinyl alcohol (PVA), sodium tetraborate pentahydrate (borate) and acetonedicarboxylic acid (ACDA) and the application of said coating by means of flexographic press is presented herein. Application criteria is developed, testing procedures described, and performance assessment of the developed coating materials are made. SEM images along with contact angle data suggest that coating performance is probably attributable to decreased mean pore size in conjunction with a slightly increased surface contact angle facilitated by crosslinking of PVA molecules by both borate ions and ACDA.

Photoresist stripping with oxygen plasma ashing destroys the functional groups in organosilicate glass films and induce moisture uptake, causing low-k dielectric degradation. In this study, hexamethyldisilazane (HMDS), triethylchlorosilane and tripropylchlorosilane are used to repair the damage to organosilicate glass by the O2 plasma ashing process. The optimization of the surface functionalization of the organosilicate glass by the silanes and the thermal stability of the functionalized surfaces are investigated. These experimental results show that HMDS is a promising technique to repair the damage to OSG during the photoresist removal processing and that the heat treatment of the functionalized surfaces causes degradation of the silanes deteriorating the hydrophobicity of the films.

This paper deals with various topics in micro electromechanical systems (MEMS) technology beginning with microactuation, MEMS processing, and MEMS design engineering. The fabrication and testing of three separate MEMS devices are described. The first two devices are a linear stepping motor and a continuous rotary motor, respectively; and were designed for the purpose of investigating the frictional and wear properties of silicon components. The third device is a bi-stable microrelay, in which electrical current conducts through a secondary circuit, via a novel probe-interconnect mechanism. The second half focuses on engineering a carbon nanotube / SU-8 photoepoxy nanocomposite for fabricating MEMS devices. A processing method for this material as well as the initial results of characterization, are discussed.

The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.

One of the final steps in fabricating microelectromechanical devices often involves a liquid etch release process. Capillary forces during the liquid evaporation stage after the wet etch process can pull two surfaces together resulting in adhesion of suspended microstructures to the supporting substrate. This release related adhesion can greatly reduce yields. In this report, a wet etch release method that uses polystyrene microspheres in the final rinse liquid is investigated. The polystyrene microspheres act as physical barriers between the substrate and suspended microstructures during the final liquid evaporation phase. A plasma ashing process is utilized to completely remove the polystyrene microspheres from the microstructure surfaces. Using this process, release yields > 90% were achieved. It is found that the surface roughness of gold surfaces increases while that of the silicon is reduced due to a thin oxide that grows on the silicon surface during the plasma process.