This dissertation work is a study of positronium formation for positron-hydrogen and positron-helium collisions in the Ore gap (the energy region between the threshold for ground-state positronium formation and the first excitation level of the target atom) using variational K-matrices. We have fitted the K-matrices using multichannel effective range theories and using polynomials. Using the variational K-matrices and their fits, we have located zeros in the positronium-formation scattering amplitude and corresponding deep minima in the positronium-formation differential cross section. The zeros are related to the vortices in the extended velocity field associated with the positronium-formation scattering amplitude. For positron-hydrogen collisions, we have found two zeros in the positronium-formation scattering amplitude, and corresponding deep minima in the positronium-formation differential cross section, while we have obtained a zero in the positronium-formation scattering amplitude for positron-helium collisions. We have connected the zeros in the positronium-formation scattering amplitude to vortices in the extended velocity fields. Our work shows that vortices can occur for charge exchange in atomic collisions.

Magnetic nano-clusters in silicon involving iron and cobalt were synthesized using low energy (50 keV) ion implantation technique and post-implantation thermal annealing. Before the irradiation, multiple ion-solid interaction simulations were carried out to estimate optimal ion energy and fluence for each experiment. For high-fluence low-energy irradiation of heavy ions in a relatively lighter substrate, modeling the ion irradiation process using dynamic code SDTrimSP showed better agreement with the experimental results compared to the widely used static simulation code TRIM. A saturation in concentration (~ 48%) profile of the 50 keV Fe or Co implants in Si was seen at a fluence of ~ 2 × 1017 ions/cm2. Further study showed that for structures with a curved surface, particularly for nanowires, better simulation results could be extracted using a code "Iradina" as the curve geometry of the target surface can be directly defined in the input file. The compositional, structural, and magnetic properties were studied using Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, atom probe tomography, and vibrating sample magnetometry. Irradiation of high-current (~ 2 μA/cm2) 50 keV Fe ions into Si at a fluence of 2 × 1017 ions/cm2 showed the formation of Fe5Si3 nano structures in the near-surface …

In this work, we have utilized an ion beam process known as gettering to migrate implanted Ni ions much deeper into the bulk substrate than their initial projected end of the range. The projected mean depth is known as Rp. The gettering effect is the most crucial part of the fabrication and we have found that for an H fluence of 3x 1016 cm-2 there is a threshold fluence of approximately 7.5 x 1015 cm-2 that cannot be surpassed if the gettering process is to be completed along with the substrate recovered to the high crystalline quality. This hard threshold is due to the gettering process relaxation induced mechanism that is responsible for migrating the Ni to the Rp/2 location while the H is vacating during the thermal annealing process. If the total number of vacancies produced by the H dissociation is not substantially larger than the total number of implanted Ni atoms the Ni will migrate to the Rp location of the Ni implantation at the amorphous and crystalline interface and toward the surface. When the gettering condition is not met the resulting magnetic responses vary from an exceptionally weak ferromagnetic response to not exhibiting a magnetic response. Additionally, …