Dissolution experiments were performed on actual samples of NWCF Run H-4 radioactive calcine in fiscal years 1998 and 1999. Run H-4 is an aluminum/sodium blend calcine. Typical dissolution data indicates that between 90-95 wt% of H-4 calcine can be dissolved using 1gram of calcine per 10 mLs of 5-8M nitric acid at boiling temperature. Two liquid raffinate solutions composed of a WM-188/aluminum nitrate blend and a WM-185/aluminum nitrate blend were converted into calcine at the NWCF. Calcine made from each blend was collected and transferred to RAL for dissolution studies. The WM-188/aluminum nitrate blend calcine was dissolved with resultant solutions used as feed material for separation treatment experimentation. The WM-185/aluminum nitrate blend calcine dissolution testing was performed to determine compositional analyses of the dissolved solution and generate UDS for solid/liquid separation experiments. Analytical fusion techniques were then used to determine compositions of the solid calcine and UDS from dissolution. The results from each of these analyses were used to calculate elemental material balances around the dissolution process, validating the experimental data. This report contains all experimental data from dissolution experiments performed using both calcine blends.

Two new failure analysis techniques have been developed for backside and front side localization of open and shorted interconnections on ICs. These scanning optical microscopy techniques take advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The methods utilize the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detect shorts. Initial investigations demonstrated the feasibility of TIVA and Seebeck Effect Imaging (SEI). Subsequent improvements have greatly increased the sensitivity of the TIVA/SEI system, reducing the acquisition times by more than 20X and localizing previously unobserved defects. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed. The system improvements, non-linear response of IC defects to heating, modeling of laser heating and examples using the improved system for failure analysis are presented.