We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.

We have explored the use of recently developed high speed integrated electro optic modulators and DBR diode lasers as a tool for precision laser studies of atoms. In particular, we have developed a technique using a high speed modulator as a key element and applied it to the study of the fine structure of the 23P state of atomic helium. This state has been of long standing interest in atomic physics and its study has been the aim of several recent experiments using various precision techniques. We present our method and results, which will describe a new method for determining the fine structure constant, and lead to a precision test of atomic theory.

This thesis utilizes the binary encounter approximation to calculate the stopping power of protons penetrating silicon. The main goal of the research was to make predictions of the stopping power of silicon for low-energy and medium-energy channelled protons, in the hope that this will motivate experiments to test the theory developed below. In attaining this goal, different stopping power theories were compared and the binary encounter approach was applied to random (non-channelled) and high-energy channelled protons in silicon, and these results were compared with experimental data.