Polymer gels undergo a volume phase transition in solvent in response to an infinitesimal environmental change. This remarkable phenomenon has resulted in many potential applications of polymer gels. The understanding of its mechanical properties has both scientific and technological importance. For this purpose, we have developed a novel method for measuring Poisson's ratio, which is one of the most important parameters determining the mechanical property of gels. Using this method, Poisson's ratio in N-isopropyacrylamide (NIPA) and polyacrylamide (PAAM) gels has been studied.

As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.

We address the problem of the DNA sequences developing a "dynamical" method based on the assumption that the statistical properties of DNA paths are determined by the joint action of two processes, one deterministic, with long-range correlations, and the other random and delta correlated. The generator of the deterministic evolution is a nonlinear map, belonging to a class of maps recently tailored to mimic the processes of weak chaos responsible for the birth of anomalous diffusion. It is assumed that the deterministic process corresponds to unknown biological rules which determine the DNA path, whereas the noise mimics the influence of an infinite-dimensional environment on the biological process under study. We prove that the resulting diffusion process, if the effect of the random process is neglected, is an a-stable Levy process with 1 < a < 2. We also show that, if the diffusion process is determined by the joint action of the deterministic and the random process, the correlation effects of the "deterministic dynamics" are cancelled on the short-range scale, but show up in the long-range one. We denote our prescription to generate statistical sequences as the Copying Mistake Map (CMM). We carry out our analysis of several DNA sequences, …

The present work reports the experimental evidence of anomalous energy loss, energy straggling, and the corresponding ion-induced electron emission yields of channeled protons in silicon.

The effects of methane (CH4), diborone (B2H6) and nitrogen (N2) concentrations on the structure and photoelectron emission properties of chemical vapor deposition (CVD) polycrystalline diamond films were studied. The diamond films were grown on single-crystal Si substrates using the hot-tungsten filament CVD technique. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) were used to characterize the different forms of carbon in the films, and the fraction of sp3 carbon to sp3 plus sp2 carbon at the surface of the films, respectively. Scanning electron microscopy (SEM) was used to characterize the surface morphology of the films. The photoelectron emission properties were determined by measuring the energy distributions of photoemitted electrons using ultraviolet photoelectron spectroscopy (UPS), and by measuring the photoelectric current as a function of incident photon energy.

This thesis utilizes the binary encounter approximation to calculate the stopping power of protons penetrating silicon. The main goal of the research was to make predictions of the stopping power of silicon for low-energy and medium-energy channelled protons, in the hope that this will motivate experiments to test the theory developed below. In attaining this goal, different stopping power theories were compared and the binary encounter approach was applied to random (non-channelled) and high-energy channelled protons in silicon, and these results were compared with experimental data.

High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.

This thesis examines the quantum dynamics of electrons in periodic semiconductor superlattices in the presence of electric fields, especially uniform static fields. Chapter 1 is an introduction to this vast and active field of research, with an analysis and suggested solutions to the fundamental theoretical difficulties. Chapter 2 is a detailed historical review of relevant theories, and Chapter 3 is a historical review of experiments. Chapter 4 is devoted to the time-independent quantum mechanical study of the electric-field-induced changes in the transmission properties of ballistic electrons, using the transfer matrix method. In Chapter 5, a new time-dependent quantum mechanical model free from the fundamental theoretical difficulties is introduced, with its validity tested at various limiting cases. A simplified method for calculating field-free bands of various potential models is designed. In Chapter 6, the general features of "Shifting Periodicity", a distinctive feature of this new model, is discussed, and a "Bloch-Floquet Theorem" is rigorously proven. Numerical evidences for the existence of Wannier-Stark-Ladders are presented, and the conditions for its experimental observability is also discussed. In Chapter 7, an analytical solution is found for Bloch Oscillations and Wannier-Stark-Ladders at low electric fields. In Chapter 8, a new quantum mechanical interpretation for Bloch …

In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.

L-shell x-ray production cross sections are presented for Fe, Ni, Cu, Zn, Ga, and Ge by 0.5- to 5.0-MeV protons and by 0.5- to 8.0-MeV helium ions and Ca, Fe, Ni, Cu, and Ge by 0.75- to 4.5-MeV lithium ions. These measurements are compared to the first Born theory and the perturbed-stationary- state theory with energy-loss, Coulomb deflection, and relativistic corrections (ECPSSR). The results are also compared to previous experimental investigations. The high precision x-ray measurements were performed with a windowless Si(Li) detector. The efficiency of the detector was determined by the use of thin target atomic-field bremsstrahlung produced by 66.5 keV electrons. The measured bremsstrahlung spectra were compared to theoretical bremsstrahlung distributions in order to obtain an efficiency versus energy curve. The targets for the measurement were manufactured by the vacuum evaporation of the target element onto thin foils of carbon. Impurities in the carbon caused interferences inthe L-shell x-ray peaks. Special cleansing procedures were developed that reduced the impurity concentrations in the carbon foil, making the use of less than 5 μg/cm^2 targets possible. The first Born theory is seen to greatly overpredict the data at low ion energies. The ECPSSR theory matches the data very well at …

The focus of this thesis is to theoretically and experimentally investigate two new schemes of synchronizing chaotic attractors using chaotically operating diode resonators. The first method, called synchronization using control, is shown for the first time to experimentally synchronize dynamical systems. This method is an economical scheme which can be viably applied to low dimensional dynamical systems. The other, unidirectional coupling, is a straightforward means of synchronization which can be implemented in fast dynamical systems where timing is critical. Techniques developed in this work are of fundamental importance for future problems regarding high dimensional chaotic dynamical systems or arrays of mutually linked chaotically operating elements.

The evolution of classically chaotic quantum systems is analyzed within the formalism of Quantum Pseudo-Probability Distributions. Due to the deep connections that a quantum system shows with its classical correspondent in this representation, the Pseudo-Probability formalism appears to be a useful method of investigation in the field of "Quantum Chaos." In the first part of the thesis we generalize this formalism to quantum systems containing spin operators. It is shown that a classical-like equation of motion for the pseudo-probability distribution ρw can be constructed, dρw/dt = (L_CL + L_QGD)ρw, which is rigorously equivalent to the quantum von Neumann-Liouville equation. The operator L_CL is undistinguishable from the classical operator that generates the semiclassical equations of motion. In the case of the spin-boson system this operator produces semiclassical chaos and is responsible for quantum irreversibility and the fast growth of quantum uncertainty. Carrying out explicit calculations for a spin-boson Hamiltonian the joint action of L_CL and L_QGD is illustrated. It is shown that the latter operator, L_QGD makes the spin system 'remember' its quantum nature, and competes with the irreversibility induced by the former operator. In the second part we test the idea of the enhancement of the quantum uncertainty triggered by …

The frequency dependence and temperature dependence of the complex dielectric constant of water is of great interest. The temperature dependence of the physical properties of water given in the literature, specific heat, thermal conductivity, electric conductivity, pH, etc. are compared to the a. c. (microwave) and d. c. conductivity of water with a variety of concentration of different substances such as HC1, NaCl, HaS04, etc. When each of these properties is plotted versus inverse absolute temperature, it can be seen that each sample shows "transition temperatures". In this work, Slater's perturbation equations for a resonant microwave cavity were used to analyze the experimental results for the microwave data.

This thesis investigation concerns the optical and nonlinear electrical properties of n-InSb. Two specific areas have been studied. First is the magneto-optical study of magneto-donors, and second is the nonlinear dynamic study of nonlinear and chaotic oscillations in InSb. The magneto-optical study of InSb provides a physical picture of the magneto-donor levels, which has an important impact on the physical model of nonlinear and chaotic oscillations. Thus, the subjects discussed in this thesis connect the discipline of semiconductor physics with the field of nonlinear dynamics.

The existence of singly, doubly, and triply charged diatomic molecular ions was observed by using an Accelerator Mass Spectrometry (AMS) technique. The mean lifetimes of 3 MeV boron diatomic molecular ions were measured. No isotopic effects on the mean lifetimes of boron diatomic molecules were observed for charge state 3+. Also, the mean lifetime of SiF^3+ was measured.

The growth mechanism of chemical vapor deposition (CVD) grown homo-epitaxial diamond (110) and (111) films was studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). In addition, the field emission properties of diamond coated molybdenum microtips were studied as a function of exposure to different gases.

I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) and a dynamic range as large as 105 at 532 nm using psec pulses. Theoretical analysis showed that the ZnSe device has a broad-band response covering the wavelength range from 550 nm to 800 nm. Moreover, I found that existing theoretical models (e.g. the Auston model and the band-resonant model using Boltzmann statistics) adequately describe the photo-generated carriers refractive nonlinearity in ZnSe. Material nonlinear optical parameters, such as the two-photon absorption coefficient β_2=5.5cm/GW, the refraction per unit carrier density σ_n=-0.8∗10^-21cm^3 and the bound electronic refraction n_2=-4∗10^-11esu, have been measured via time-integrated beam distortion experiments in the near field. A numerical code has been written to simulate the beam distortion in order to extract the …

The rotational microwave spectra of the three isotopes (^13CH_3^12C^15N, ^12CH_3^13C^15N, and ^13CH_3^13C^15N) of the methyl cyanide molecule in the v_8=3, v_8=2, v_7=1 and v_4=1 vibrational energy levels for the rotational components 1£J£5 (for a range of frequency 17-95 GHz.) were experimentally and theoretically examined. Rotational components in each vibration were measured to determine the mutual interactions in each vibration between any of the vibrational levels investigated. The method of isotopic substitution was employed for internal tuning of each vibrational level by single and double substitution of ^13C in the two sites of the molecule. It was found that relative frequencies within each vibration with respect to another vibration were shifted in a systematic way. The results given in this work were interpreted on the basis of these energy shifts. Large departure between experimentally measured and theoretically predicted frequency for the quantum sets (J, K=±l, ϑ=±1), Kϑ-l in the v_8=3 vibrational states for the ^13c and ^15N tagged isotopes of CH_3CN showed anomalous behavior which was explained as being due to Fermi resonance. Accidently strong resonances (ASR) were introduced to account for some departures which were not explained by Fermi resonance.

The author explores absorptive and refractive optical nonlinearities at 1.06 [mu]m in bulk, semi-insulating, undoped GaAs with a particular emphasis on the influence of the native deep-level defect known as EL2. Picosecond pump-probe experimental technique is used to study the speed, magnitude, and origin of the absorptive and refractive optical nonlinearities and to characterize the dynamics of the optical excitation of EL2 in three distinctly different undoped, semi-insulating GaAs samples. Intense optical excitation of these materials leads to the redistribution of charge among the EL2 states resulting in an absorptive nonlinearity due to different cross sections for electron and hole generation through this level. This absorptive nonlinearity is used in conjunction with the linear optical properties of the material and independent information regarding the EL2 concentration to extract the cross section ratio [sigma][sub p]/[sigma][sub e] [approx equal]0.8, where [sigma][sub p](e) is the absorption cross section for hole (electron) generation from EL2[sup +] (EL2[sup 0]). The picosecond pump-probe technique can be used to determine that EL2/EL2[sup +]density ratio in an arbitrary undoped, semi-insulating GaAs sample. The author describes the use of complementary picosecond pump-probe techniques that are designed to isolate and quantify cumulative and instantaneous absorptive and refractive nonlinear processes. Numerical …

Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, …

The characterization of work functions and field emission stability for molybdenum and iridium oxide coatings was examined. Single emission tips and flat samples of molybdenum and iridium oxide were prepared for characterization. The flat samples were characterized using X-ray Photoelectron Spectroscopy and X-ray diffraction to determine elemental composition, chemical shift, and crystal structure. Flat coatings of iridium oxide were also scanned by Atomic Force Microscopy to examine topography. Work functions were characterized by Ultraviolet Photoelectron Spectroscopy from the flat samples and by Field Emission Electron Distributions from the field emission tips. Field emission characterization was conducted in a custom build analytical chamber capable of measuring Field Emission Electron Distribution and Fowler-Nordheim I-V plots simultaneously to independently evaluate geometric and work function changes. Scanning Electron Microscope pictures were taken of the emission tips before and after field emission characterization to confirm geometric changes. Measurement of emission stability and work functions were the emphasis of this research. In addition, use of iridium oxide coatings to enhance emission stability was evaluated. Molybdenum and iridium oxide, IrO2, were characterized and found to have a work function of 4.6 eV and 4.2 eV by both characterization techniques, with the molybdenum value in agreement with previous …

We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.

Intensive demands have arisen to characterize nonlinear optical properties of materials for applications involving optical limiters, waveguide switches and bistable light switches. The technique of Pulse Delay Modulation is described which can monitor nonlinear changes in transmission with shot noise limited signal-to-noise ratios even in the presence of large background signals. The theoretical foundations of the experiment are presented followed by actual measurements of beam depletion due to second harmonic generation in a LiIO3 crystal and two-photon absorption in the semiconductor ZnSe. Sensitivity to polarization rotation arising from the Kerr Effect in carbon disulfide, saturable absorber relaxation in modelocking dyes and photorefractive effects in ZnSe are demonstrated. The sensitivity of Pulse Delay Modulation is combined with Fabry-Perot enhancement to allow the measurement of two-photon absorption in a 0.46pm thick interference filter spacer layer. Also included is a study of nonlinear optical limiting arising from dielectric breakdown in gases.

This thesis examines the evolution of beams in synchrotrons. Following an introduction to accelerator physics in Chapter 1, in Chapter 2 I describe the Fermilab E778 'diffusion' experiment. Families of sextupoles were powered to drive the 2/5 resonance, and a beam was then kicked to populate a nonlinear region of the transverse phase space. The beam was then observed over periods of approximately 30 minutes for a variety of kick amplitudes and physical apertures. In Chapter 3 comments about the analytic treatment of such systems are discussed, including the assumptions inherent in the conventional treatment. I motivate my use of a simplified model in Chapter 4 after examining common computational methods. Deriving the model from the formalism of traditional accelerator physics, I discuss its implementation on a massively parallel computer, the Intel iPSC/860 hypercube, and examine the performance of this algorithm in detail. Using the simple model to perform the numerical experiment equivalent to E778 is the subject of Chapter 5. I derive the parameters needed for the simple model based upon the physical experiment. Both three dimensional cases and cases with reduced dimensionality are run. From power supply ripple data and an electrical model of the magnet string, I …