Inkjet-printed MoS₂-based field-effect transistors with graphene and hexagonal boron nitride inks (open access)

Inkjet-printed MoS₂-based field-effect transistors with graphene and hexagonal boron nitride inks

This article reports the design, fabrication, and characterization of an all inkjet-printed field-effect transistor (FET).
Date: July 10, 2020
Creator: Hossain, Ridwan F. & Kaul, Anupama
System: The UNT Digital Library
Inks of dielectric h-BN and semiconducting WS₂ for capacitive structures with graphene (open access)

Inks of dielectric h-BN and semiconducting WS₂ for capacitive structures with graphene

This article presents dispersions of WS₂ and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices.
Date: July 30, 2020
Creator: Desai, Jay A.; Mazumder, Sangram; Hossain, Ridwan Fayaz & Kaul, Anupama
System: The UNT Digital Library