Inkjet-printed MoS₂-based field-effect transistors with graphene and hexagonal boron nitride inks (open access)

Inkjet-printed MoS₂-based field-effect transistors with graphene and hexagonal boron nitride inks

This article reports the design, fabrication, and characterization of an all inkjet-printed field-effect transistor (FET).
Date: July 10, 2020
Creator: Hossain, Ridwan F. & Kaul, Anupama
System: The UNT Digital Library