Collection
Degree Department
2 Matching Results
Results open in a new window/tab.
Results:
1 - 2 of
2
Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer
Article describes an experiment in which a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer was fabricated, and compares it's interfacial and electrical properties with those of its counterparts that have not undergone passivation treatment.
Date:
October 21, 2019
Creator:
He, Gang; Wang, Die; Ma, Rui; Liu, Mao & Cui, Jingbiao
System:
The UNT Digital Library
Electrostatic equilibria of non-neutral plasmas confined in a Penning trap with axially varying magnetic field
This article describes a procedure for computing the electrostatic equilibria of non-neutral plasmas in a Penning trap with a nonuniform magnetic field by solving Poisson's equation using an iterative method. Plasma equilibria in a model Penning trap with high and low field regions are computed. The plasma is assumed to follow the Boltzmann density distribution along magnetic field lines.
Date:
May 21, 2019
Creator:
Lane, Ryan A. & Ordonez, Carlos A.
System:
The UNT Digital Library