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Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer
Article describes an experiment in which a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer was fabricated, and compares it's interfacial and electrical properties with those of its counterparts that have not undergone passivation treatment.
Date:
October 21, 2019
Creator:
He, Gang; Wang, Die; Ma, Rui; Liu, Mao & Cui, Jingbiao
Object Type:
Article
System:
The UNT Digital Library
Exploration of Information Organization in Language Archives
Presentation based on the preliminary results of research into information organization in language archives. This looks at the background of language data and archives, their research questions, archives that were analyzed, their findings, and next steps.
Date:
October 21, 2019
Creator:
Burke, Mary & Zavalina, Oksana
Object Type:
Presentation
System:
The UNT Digital Library