Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts (open access)

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

This article describes the performance of a multifaceted investigation comprising of atomic force microscopy (AFM0, photoluminescence (PL) and Raman spectroscopy to analyze the structural and chemical characteristics to help shed insights on the origins of the superior optoelectronic device performance.
Date: February 23, 2017
Creator: Saenz, Gustavo A.; Karapetrov, Goran; Curtis, James & Kaul, Anupama
System: The UNT Digital Library
Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices (open access)

Sc3N@C80 and La@C82 doped graphene for a new class of optoelectronic devices

This is the Author Manuscript version of an article presenting high-performance hybrid graphene photodetectors prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time.
Date: December 19, 2019
Creator: Jayanand, Kishan; Min, Misook; Chugh, Srishti; Kaul, Anupama; Adhikari, Nirmal & Echegoyen, Luis
System: The UNT Digital Library