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Hexagonal MoTe₂ with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
This article demonstrates the effectiveness of an a-BN capping layer in preserving few-layer MoTe₂ material quality and controlling its conductivity type at elevated temperatures in an atmospheric environment.
Date:
June 6, 2018
Creator:
Sirota, Benjamin; Glavin, Nicholas; Krylyuk, Sergiy; Davydov, Albert V. & Voevodin, Andrey A.
System:
The UNT Digital Library