Throughout history consumer products were generally manufactured from wood and metal. They either had to hold their natural color or become subject to painting. When plastics entered the industry, it was recognized for its ease of shaping, re-usability, physical properties and its low cost. One of plastics' greatest benefits is its ability to hold a given color from within allowing it to avoid use of paint. This paper will give a brief overview on the effects of pigments when incorporated in a polyolefin. It will provide a classification of the main types of pigments and how each effect the properties of the product through: crystallization, weatherability, opacity, coloristic values and of course viscosity.

The rheology of 1-8% hydroxypropyl cellulose (HPC) solutions has been studied in the temperature range of 20-45 degrees Celsius. The results showed that the relative viscosity at each HPC concentration decreases with increasing temperature. The relative viscosity decreases drastically at about 43 degrees Celsius due to a phase transition. The influence of anionic surfactant, sodium dodecylsulfate (SDS), induced gelation of a 2% HPC solution. The HPC solutions gelled at surfactant SDS concentrations ranging from 0.4 to 1.0 critical micelle concentration (CMC). The gelation of the HPC/SDS hydrogel is explained in the surfactant SDD - bridged HPC linear polymer chains. The complex viscosity - concentration profile was determined below the CMC of the SDS - water pair. The peak itself was a function of frequency indicating the presence of two relaxation times within the gelled network.

This problem in lieu of thesis report describes a practical photolithographic method to produce micro patterns on metal-oxide-semiconductor or metal-oxide-semiconductor-metal layers for electrical measurements. The desired patterns are then transferred from the photo mask to the photoresist-coated metal film by exposure, followed by wet etching. In the procedure described in this report, it was observed that microstructures as small as 27 mm with an edge roughness of ~ 2 mm can be reproducibly generated with this process. MOS capacitors and transistors structures can be fabricated by using this technique. The method described in this report requires access to only simple facilities so that it is relatively inexpensive, and the overall time required for the whole process is short.

It has become increasingly important to remain on the cutting edge of technology for a company to remain competitive and survive in today's high-tech industries. To do this, a company needs various resources dedicated to this cause. One of these resources is the use of existing materials, as starting points, for which improved materials can be based. For this, a company must rely on the characterization of existing materials to bring that base technology into their company. Through this evaluation, the base materials properties can be obtained and a material with improved properties can be developed. There are many techniques that can be used in characterizing an existing material, but not every technique is required to obtain the desired goal. The techniques utilized depend upon the depth of identification required. This report summarizes several techniques utilized in the characterization of existing materials and provides some examples of evaluated products.

This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in contact with poly-SiGe is 1050 C for 20s in high purity N2(99.9%) ambient. We also found that after 1000 C annealing for 60s in a nitrogen ambient, the poly-SiGe crystal phase structure was changed from a columnar structure to a large grain structure. For a metal gate, Ru was studied to determine N2annealing effects on sheet resistance of Ru sample electrodes and electrical characterization of Ru/HfSiOx/Si stack. Results show that a pure Ru metal gate is not a good choice for high k materials since it is hard to etch off, and different annealing conditions can cause large changes in …