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The conclusions of this report are: (1) intrinsic donor-type defects In{sub Cu}, Ga{sub Cu}, and V{sub Se}, and their complexes with V{sub Cu} cause metastability, but also act to limit V{sub OC}; (2) growth conditions which minimize these defects (Cu-rich/Se-rich) are very different from those currently used; and (3) overcoming V{sub OC} limitation requires to address other issues and trade-offs.

ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

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Nonuniform battery physics can cause unexpected performance and life degradations in lithium-ion batteries; a three-dimensional cell performance model was developed by integrating an electrode-scale submodel using a multiscale modeling scheme.

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From production to the environment, presentation discusses issues surrounding ethanol as a transportation fuel.

The summaries of this report are: (1) charged defects produce 10{sup 15}-10{sup 17} cm{sup -3} free carriers; (2) treatment with nucleophiles decreases p{sub f} and {sigma} while treatment with electrophiles does not change p{sub f} but increases {sigma}; (3) both treatments increase {mu}{sub p}, L{sub ex} and stability against photo-degradation; (4) charged defects can improve OPV by increasing conductivity and creating interfacial electric fields but they hurt {mu}{sub p}, L{sub ex} and chemical stability; and (5) a better way--synthesize materials without covalent defects and dope with purposely added, bound dopants.

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The motivation for this presentation is that growing inverted cells may enable technological advances in solar cell fabrication, leading to higher efficiencies. Differences in dopant diffusion during inverted vs. upright growths may lead to differences in atomic depth profiles; changes in carrier concentrations; higher contact resistance and lower overall performance. This presentation summarizes that excellent performance is achievable in both upright and inverted configurations with proper consideration; subtle differences in depth profile QE and JV between upright and inverted growths due to dopant diffusion; and GaInAsN contact layer is resilient to length annealing and more work is necessary to determine why.

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The objectives of this report are to: (1) validate H{sub 2} FC vehicles and infrastructure in parallel; (2) identify current status of technology and its evolution; (3) re-focus H{sub 2} research and development; and (4) support technology readiness milestone by 2015.

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Developed linked parametric modeling tools to mathematically evaluate battery designs to satisfy challenging operational requirements for a PHEV.

The objective of the Junction Studies are: (1) understand the nature of the junction in the CdTe/CdS device; (2) correlate the device fabrication parameters to the junction formation; and (3) develop a self consistent device model to explain the device properties. Detailed analysis of CdS/CdTe and SnO{sub 2}/CdTe devices prepared using CSS CdTe is discussed.

The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

This presentation's summaries: a convenient truth, comparison of three concentrator technologies, value of high efficiency, and status of industry.

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