NASCION-type lithium-aluminum-germanium-phosphate (LAGP) glass-ceramic is one of the most promising solid electrolyte (SEs) material for the next generation Li-ion battery. Based on the crystallization of glass-ceramic material, the two-step heat treatment was designed to control the crystallization of Li-ion conducting crystal in the glass matrix. The results show that the LAGP crystal is preferred to internally crystalize, Tg + 60%∆T is the nucleation temperature that provides the highest ion conductivity. The compositional investigation also found that, pure LAGP crystal phase can be synthesized by lowering the amount of GeO2. To fill gap of atomic structure in LAGP glass-ceramic, molecular dynamic (MD) simulation was used to build the crystal, glass, and interfacial structure LAGP. The aliovalent ion substitution induced an simultaneously redistribution of Li to the 36f interstitial site, and the rapid cooperative motion between the Li-ions at 36f can drop the activation energy of LAGP crystal by decreasing the relaxation energy; furthermore, an energy model was built based on the time-based analysis of Li-ion diffusion to articulate the behavior. The glass and interfacial structure show and accumulation of AlO4, GeO4 and Li at the interface, which explains the Li-trapping on the intergranular glass phase. An in-situ synchrotron X-ray study found …

This dissertation tested the hypothesis that energy transferred from a plasma or plume can be used to optimize the structure, chemistry, topography, optical and electrical properties of pulsed laser deposited and sputtered thin-films of ZnO, a-BOxNy, and few layer 2H-WS2 for transparent electronics devices fabricated without substrate heating or with low substrate heating. Thus, the approach would be compatible with low-temperature, flexible/bendable substrates. Proof of this concept was demonstrated by first optimizing the processing-structure-properties correlations then showing switching from accumulation to inversion in ITO/a-BOxNy/ZnO and ITO/a-BOxNy/2H-WS2 transparent MIS capacitors fabricated using the stated processes. The growth processes involved the optimization of the individual materials followed by growing the multilayer stacks to form MIS structures. ZnO was selected because of its wide bandgap that is transparent over the visible range, WS2 was selected because in few-layer form it is transparent, and a-BOxNy was used as the gate insulator because of its reported atomic smoothness and low dangling bond concentration. The measured semiconductor-insulator interfacial trap properties fall in the range reported in the literature for SiO2/Si MOS structures. X-ray photoelectron spectroscopy (XPS), Hall, photoluminescence, UV-Vis absorption, and X-ray diffraction (XRD) measurements investigated the low-temperature synthesis of ZnO. All films are nanocrystalline with …