Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications in comparison with the direct band-gap III-V semi-conductors such as GaAs. To bridge this gap, what is ideally required is a semi-conductor material system that is based on silicon, but has significantly greater versatility. While sparsely studied, the semi-conducting silicides material systems offer great potential. Thus, I focused on the growth and structural characterization of ruthenium silicide and osmium silicide material systems. I also characterized iron silicon germanide films using extended x-ray absorption fine structure (EXAFS) to reveal phase, semi-conducting behavior, and to calculate nearest neighbor distances. The choice of these silicides material systems was due to their theoretically predicted and/or experimentally reported direct band gaps. However, the challenge was the existence of more than one stable phase/stoichiometric ratio of these materials. In order to possess the greatest control over the growth process, molecular beam epitaxy (MBE) has been employed. Structural and film quality comparisons of as-grown versus annealed films of ruthenium silicide are presented. Structural characterization and film quality of MBE grown ruthenium silicide and osmium silicide films via in situ and ex situ …