As extreme-ultraviolet lithography (EUVL) approaches introduction at the 22-nm half-pitch node, several key aspects of absorber height effects remain unexplored. In particular, sidewall angle (SWA) restrictions based on the height of the mask absorber has not yet been clearly defined. In addition, the effects of absorber height on line-edge roughness (LER) from shadowing has not been examined. We make an initial investigation into how tight SWA constraints are and the extent to which shadow LER alters basic LER. Our approach to SWA aims to find SWA restrictions based on 10% of the total CD error budget (10% of CD). Thus, we allot the SWA budget a {+-}0.2nm tolerance for 22nm half-pitch. New with EUVL is the off-axis illumination system. One potential pitfall that must be carefully monitored is the effect of mask absorber height blocking light from reaching, and therefore, correctly detecting, the base edge position of a feature. While mask features can correctly compensate sizing to target at the wafer, the effects of this shadowing on LER have not yet been investigated. Specifically, shadow LER may exacerbate or mitigate the inherent LER on the mask. Shadowing may also cause a difference in the observed LER on the right and …

In the push towards commercialization of extreme-ultraviolet lithography (EUVL), meeting the stringent requirements for line-edge roughness (LER) is increasingly challenging. For the 22-nm half-pitch node and below, the ITRS requires under 1.2 nm LER. Much of this LER is thought to arise from three significant contributors: LER on the mask absorber pattern, LER from the resist, and LER from mask roughness induced speckle. The physical mechanism behind the last contributor is becoming clearer, but how it is affected by the presence of aberrations is less well understood. Here, we conduct a full 2D aerial image simulation analysis of aberrations sensitivities of mask roughness induced LER for the first 37 fringe zernikes. These results serve as a guideline for future LER aberrations control. In examining how to mitigate mask roughness induced LER, we next consider an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a 'strip'. While this illumination surprisingly provides merely minimal improvement to the LER as several alternate illumination schemes, overall imaging quality in terms of ILS, NILS, and contrast is improved. While the 22-nm half-pitch node can tolerate significant aberrations from a mask …

Previous experiments at the Rifle, Colorado Integrated Field Research Challenge (IFRC) site demonstrated that field-scale addition of acetate to groundwater reduced the ambient soluble uranium concentration. In this report, sediment samples collected before and after acetate field addition were used to assess the active microbes via {sup 13}C acetate stable isotope probing on 3 phases [coarse sand, fines (8-approximately 150 {micro}m), groundwater (0.2-8 {micro}m)] over a 24-day time frame. TRFLP results generally indicated a stronger signal in {sup 13}C-DNA in the 'fines' fraction compared to the sand and groundwater. Before the field-scale acetate addition, a Geobacter-like group primarily synthesized {sup 13}C-DNA in the groundwater phase, an alpha Proteobacterium primarily grew on the fines/sands, and an Acinetobacter sp. and Decholoromonas-like OTU utilized much of the {sup 13}C acetate in both groundwater and particle-associated phases. At the termination of the field-scale acetate addition, the Geobacter-like species was active on the solid phases rather than the groundwater, while the other bacterial groups had very reduced newly synthesized DNA signal. These findings will help to delineate the acetate utilization patterns of bacteria in the field and can lead to improved methods for stimulating distinct microbial populations in situ.

Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with predictions made from AFM top-surface measurements of those defects. While amplitude defects are usually easy to recognize and quantify with standard inspection techniques like scanning electron microscopy (SEM), defects or structures that have a phase component can be much more challenging to inspect. A phase defect can originate from the substrate or from any level of the multilayer. In both cases its effect on the reflected field is not directly related to the local topography of the mask surface, but depends on the deformation of the multilayer structure. Using the …

The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.

This article presents a study of intramuscular motion during contraction of skeletal muscle myofibrils.