NiSi is an attractive material in the production of CMOS devices. The problem with the utilization of NiSi, is that there is no proper method of cleaning the oxide on the surface. Sputtering is the most common method used for the cleaning, but it has its own complications. Dry cleaning methods include the reactions with radicals and these processes are not well understood and are the focus of the project. Dissociated NF3 and NH3 were used as an alternative and XPS is the technique to analyze the reactions of atomic fluorine and nitrogen with the oxide on the surface. A thermal cracker was used to dissociate the NF3 and NH3 into NFx+F and NHx+H. There was a formation of a NiF2 layer on top of the oxide and there was no evidence of nitrogen on the surface indicating that the fluorine and hydrogen are the reacting species. XPS spectra, however, indicate that the substrate SiO2 layer is not removed by the dissociated NF3 and NiF2 growth process. The NiF2 over layer can be reduced to metallic Ni by reacting with dissociated NH3 at room temperature. The atomic hydrogen from dissociated ammonia reduces the NiF2 but it was determined that the …

The reaction of the chelating ligand 4-[4,6-bis(3,5-dimethyl-1H-pyrazol-1-yl)-1,3,5-triazin-2-yl]-N,N-diethyl-benzenamine, L, with pentacarbonylchlororhenium by conventional heating method produces the complexes fac-[ReL(CO)3Cl2] and fac-[Re2L(CO)6Cl2] in a period of 48 hours. The use of microwaves as the source of heat and the increase in the equivalents of one of the reactants leads to a more selective reaction and also decreases the reaction time to 1 hour. After proper purification, the photophysical properties of fac-[ReL(CO)3Cl] were analyzed. The solid-state photoluminescence analysis showed an emission band at 628 nm independent of temperature. However, in the solution studies, the emission band shifted from 550 nm in frozen media to 610 nm when the matrix became fluid. These results confirm that this complex possess a phenomenon known as rigidochromism.