Modern studies on charge transfer reaction and conductivity measurements of DNA have shown that the electrical behavior of DNA ranges from that of an insulator to that of a wide bandgap semiconductor. Based on this property of DNA, a metal-semiconductor-metal photodetector is fabricated using a self-assembled layer of deoxyguanosine derivative (DNA base) deposited between gold electrodes. The electrodes are lithographically designed on a GaN substrate separated by a distance L (50nm < L < 100nm). This work examines the electrical and optical properties of such wide-bandgap semiconductor based biomaterial systems for their potential application as photodetectors in the UV region wherein most of the biological agents emit. The objective of this study was to develop a biomolecular electronic device and design an experimental setup for electrical and optical characterization of a novel hybrid molecular optoelectronic material system. AFM results proved the usage of Ga-Polar substrate in conjugation with DG molecules to be used as a potential electronic based sensor. A two-terminal nanoscale biomolectronic diode has been fabricated showing efficient rectification ratio. A nanoscale integrated ultraviolet photodetector (of dimensions less than 100 nm) has been fabricated with a cut-off wavelength at ~ 320 nm.

Group- III nitride based semiconductors have emerged as the leading material for short wavelength optoelectronic devices. The InGaN alloy system forms a continuous and direct bandgap semiconductor spanning ultraviolet (UV) to blue/green wavelengths. An ideal and highly efficient light-emitting device can be designed by enhancing the spontaneous emission rate. This thesis deals with the design and fabrication of a visible light-emitting device using GaN/InGaN single quantum well (SQW) system with enhanced spontaneous emission. To increase the emission efficiency, layers of different metals, usually noble metals like silver, gold and aluminum are deposited on GaN/InGaN SQWs using metal evaporator. Surface characterization of metal-coated GaN/InGaN SQW samples was carried out using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Photoluminescence is used as a tool for optical characterization to study the enhancement in the light emitting structures. This thesis also compares characteristics of different metals on GaN/InGaN SQW system thus allowing selection of the most appropriate material for a particular application. It was found out that photons from the light emitter couple more to the surface plasmons if the bandgap of former is close to the surface plasmon resonant energy of particular metal. Absorption of light due to gold reduces the …

Indoor use of wireless systems poses one of the biggest design challenges. It is difficult to predict the propagation of a radio frequency wave in an indoor environment. To assist in deploying the above systems, characterization of the indoor radio propagation channel is essential. The contributions of this work are two-folds. First, in order to build a model, extensive field strength measurements are carried out inside two different buildings. Then, path loss exponents from log-distance path loss model and standard deviations from log-normal shadowing, which statistically describe the path loss models for a different transmitter receiver separations and scenarios, are determined. The purpose of this study is to characterize the indoor channel for 802.11 wireless local area networks at 2.4 GHz frequency. This thesis presents a channel model based on measurements conducted in commonly found scenarios in buildings. These scenarios include closed corridor, open corridor, classroom, and computer lab. Path loss equations are determined using log-distance path loss model and log-normal shadowing. The chi-square test statistic values for each access point are calculated to prove that the observed fading is a normal distribution at 5% significance level. Finally, the propagation models from the two buildings are compared to validate the …