Fabrication of wide-IF 200–300GHz superconductor–insulator–superconductor mixers with suspended metal beam leads formed on silicon-on-insulator (open access)

Fabrication of wide-IF 200–300GHz superconductor–insulator–superconductor mixers with suspended metal beam leads formed on silicon-on-insulator

This article reports on a fabrication process that uses silicon-oninsulator (SOI) substrates and micromachining techniques to form wide-IF superconductor–insulator–superconductor (SIS) mixer devices that have suspended metal beam leads for rf grounding. Aside from a description of the fabrication process, electrical measurements of these Nb/Al–AlNₓ /Nb trilayer devices will also be presented.
Date: October 7, 2004
Creator: Kaul, Anupama; Bumble, Bruce; Lee, Karen A.; LeDuc, Henry G.; Rice, Frank & Zmuidzinas, Jonas
System: The UNT Digital Library