An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

A sorbent material is provided comprising a material reactive with sulfur, a binder unreactive with sulfur and an inert material, wherein the sorbent absorbs the sulfur at temperatures between 30 and 200 C. Sulfur absorption capacity as high as 22 weight percent has been observed with these materials.

A method for producing diamonds is provided comprising exposing carbonaceous material to ion irradiation at ambient temperature and pressure.