The temperature dependence of the reactions of halogen atoms Cl and Br with SiH4 and (CH3)3SiH have been investigated with the flash photolysis-resonance fluorescence technique. CCI4 and CH2Br2 were used as precursors to produce Cl and Br atoms, respectively. Experiments gave {k(Cl + SiH4) (295 - 472 K)} = (1.56 +0.11) x 10-1 exp[(2.0 + 0.2) kJ mol'/RT] cm3 s4, {k(Br + SiH4)(295 - 575 K)} = (9.0 + 1.5) x 10-" exp[-(17.0 + 0.6) Id mol'/RT] cm3 s', {k(Cl + (CH3)3SiH)(295 - 468 K)} = (1.24 0.35) x 104 exp[(1.3 + 0.8) Id mol4/RT] cm3 s', and {k(Br + (CH3)3SiH)(295 - 456 K)} = (7.6 + 3.3) x 1010 exp[-(28.4 + 1.3) Id mol'/RT] cm3 s'. The results were compared with values from earlier work.

Evidence is reported for the formation of carbon-containing contamination products at the copper-tungsten (Cu-W) interface during the metal organic chemical vapor deposition (MOCVD) of copper on tungsten. Cu(II)bishexafluoroacetylacetonate [Cu(hfac)_2] was physisorbed onto lightly oxidized tungsten (WO_x) at 115K, under ultra-high vacuum conditions, and then annealed sequentially to higher temperatures. Copper reduction was observed by 320K. Carbonaceous and carbidic contamination of the WO_x surface was observed, even after sample warming to 625K in UHV. The results indicate that low temperature MOCVD of Cu may be possible, but interfacial contamination from the organic ligand fragmentation is a major concern.

One- and two-dimensional NMR spectroscopy, including 13C{6Li}{1H} triple resonance techniques, were used to characterize a series of mixed alkyllithium aggregates and to study their exchange processes.