Born to meet the special needs of America`s space effort, the SP-100 Program testifies to the cooperation among government agencies. The Department of Energy (DOE), the National Aeronautics and Space Administration (NASA), and the Defense Advanced Research Projects Agency (DARPA) are working together to produce a 100-kW power system for use in outer space. At this point in the effort, it is appropriate to review: The approach to meet program goals; the status of activities of the Project Office, managed by the Jet Propulsion Laboratory (JPL); and, because this is a meeting on materials, answers beings developed by the Project Office to vital questions on refractory alloy technology.

The original SP-100 conceptual system design was examined from the mechanical design and integration viewpoint for the purpose of updating the design, identifying concerns, and providing recommendations for future work. Some of the findings were that: Integration of heat pipes into the radiator structure appears practical, but a number of problems remain to be addressed and resolved through development effort; thermal and structural interfacing of the shield and defining shield weight are key areas that need to be addressed; the radiator may be critical in shell buckling which would make beryllium a leading candidate material; material problems such as beryllium vs. shuttle fracture mechanics criteria need to be addressed.

The objective of this task was to establish and evaluate what PCC technologies need to be developed and what impact the availability and development of PCC technologies will have on Ground Demonstration Development Decision.

DARPA, in conjunction with DOE`s Office of Nuclear Energy, and NASA`s Office of Aeronautics and Space Technology are jointly sponsoring a space nuclear reactor power system program known as the Space Power-100 (SP-100) Development Project. The program is presently in the critical technology phase. This phase, better known as technology assessment and advancement, includes mission requirements definition, system conceptual designs, and critical technology development. A ground test phase decision is scheduled for July 1985. If the decision is positive, the next phase would begin in fiscal year 1986. An overriding concern in conducting this program is to ensure that nuclear safety is being properly addressed even in these early stages.

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. It was also shown that ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT > 1 is realizable. These materials can be divided into two classes: (i) the rare-earth chalcogenides, which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (ii) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.