Resource Type

HIGH CHARGE EFFECTS IN SILICON DRIFT DETECTORS WITH LATERAL CONFINEMENT OF ELECTRONS. (open access)

HIGH CHARGE EFFECTS IN SILICON DRIFT DETECTORS WITH LATERAL CONFINEMENT OF ELECTRONS.

A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2 {center_dot} 10{sup 5} electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained.
Date: October 21, 1995
Creator: CASTOLDI,A. & REHAK,P.
System: The UNT Digital Library