Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize solder joints on these substrates. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21-Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of processing conditions that included: (1) double versus triple prints, (2) dielectric window versus no window, and (3) three firing temperatures (800 C, 875 C and 950 C). Sn63-Pb37 solder paste with an RMA flux was screen printed onto the circuit boards. The appropriate packages, which included five sizes of chip capacitors and four sizes of leadless ceramic chip carriers, were placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. Nonsoldered pads were removed from the test vehicles and the porosity of their thick film layers was measured using quantitative image …

The past several years rendered a resurgence of interest in phosphors for low-voltage flat panel displays utilizing cathodoluminescence (CL). A major selection criterion for these phosphors is CL efficiency. The objective is to maximize the efficiency at low voltages. This work focuses on understanding the materials properties that influence CL efficiency below 1 kV. Existing high-voltage CL efficiency models take into account intrinsic materials properties such as band-gap energy. Experimental data reveals that the CL efficiency also depends on physical properties such as particle and crystallite size. An update, predictive model of CL efficiency that includes the effects of crystallite size, radiative recombination probability, and electron accelerating potential was developed. The predicted efficiencies agree very well with experimental results. The experimental data were collected using a hot filament electron gun in a demountable high-vacuum chamber. To obtain measurement accuracy, secondary electrons were collected and the phosphor excited with a uniform beam profile. A CL characterization protocol for display phosphors was established at Sandia National Laboratories and made available to phosphor researchers.

The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF{sub 6}. The self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. Tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. The wear resistance of selectively coated …

The authors demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub c} and negligible {triangle}E{sub v}, this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E{sub g}=1.20eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs.

This paper describes three-dimensional microstructures fabricated in a planar process and assembled in a single step. Multiple plates are constrained by hinges in such a way as to reduce the assembly process to a single degree-of-freedom of motion. Serial microassembly of these structures is simpler; moreover, self-assembly using hydrodynamic forces during release is much more feasible than with earlier, multiple degree-of-freedom hinged structures. A 250-{micro}m corner cube reflector, a 6-sided closed box, and a 3-D model of the Berkeley Campanile clock tower have been demonstrated in the 4-level polysilicon SUMMiT MEMS foundry.

Fine particle porous {alpha}-alumina has been prepared by a wet chemical method of combustion synthesis using an aqueous precursor containing aluminum nitrate (oxidizer) and carbohydrazide, an organic fuel as starting materials. The aluminum nitrate and carbohydrazide were reacted exothermically at 400--600 C. The synthesis of {alpha}-alumina ({alpha}-Al{sub 2}O{sub 3}) was used as a model for understanding the effects of processing parameters on physical properties such as surface area, average pore size, and residual carbon content. The porous powders were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), BET surface area analysis and elemental analysis. The decomposition of the starting materials was investigated using differential thermal and thermogravimetric analyses (DTA/TGA). It has been shown that the furnace temperature, fuel/oxidizer ratio, and precursor water content can be tailored to produce powders with different physical properties.

The corrosion products formed on a stainless steel-15Zr (SS-15Zr) alloy have been characterized by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Examination of alloy particles that were immersed in 90 C deionized water for two years revealed that different corrosion products were formed on the stainless steel and intermetallic phases. Two corrosion products were identified on an austenite particle: trevorite (NiFe{sub 2}O{sub 4}) in the layer close to the metal and maghemite (Fe{sub 2}O{sub 3}) in the outer layer. The corrosion layer formed on the intermetallic was uniform, adherent, and amorphous. The EDS analysis indicated that the layer was enriched in zirconium when compared with the intermetallic composition. High-resolution TEM images of the intermetallic-corrosion layer interface show an interlocking metal-oxide interface which may explain the relatively strong adherence of the corrosion layer to the intermetallic surface. These results will be used to evaluate corrosion mechanisms and predict long-term corrosion behavior of the alloy waste form.

We examine correlations in a time series of electric power system blackout sizes using scaled window variance analysis and R/S statistics. The data shows some evidence of long time correlations and has Hurst exponent near 0.7. Large blackouts tend to correlate with further large blackouts after a long time interval. Similar effects are also observed in many other complex systems exhibiting self-organized criticality. We discuss this initial evidence and possible explanations for self-organized criticality in power systems blackouts. Self-organized criticality, if fully confirmed in power systems, would suggest new approaches to understanding and possibly controlling blackouts.

In late 1997, the In-Tank Precipitation (ITP), facility was shut down and an evaluation of alternative methods to process the liquid high-level waste stored in the Savannah River Site High-Level Waste storage tanks was begun. The objective was to determine whether another process might avoid the operational difficulties encountered with ITP for a lower cost than modifying the existing structured approach to evaluating proposed alternatives on a common basis to identify the best one. Results from the computational analysis were a key part of the input used to select a primary and a secondary salt disposition alternative. This paper describes the process by which the computation needs were identified, addressed, and accomplished with a limited staff under stringent schedule constraints.

The application of process capability analysis, using designed experiments, and gage capability studies as they apply to coordinate measurement machine (CMM) uncertainty analysis and control will be demonstrated. The use of control standards in designed experiments, and the use of range charts and moving range charts to separate measurement error into it's discrete components will be discussed. The method used to monitor and analyze the components of repeatability and reproducibility will be presented with specific emphasis on how to use control charts to determine and monitor CMM performance and capability, and stay within your uncertainty assumptions.

The natural space radiation environment presents a great challenge to present and future satellite systems with significant assets in space. Defining requirements for such systems demands knowledge about the space radiation environment and its effects on electronics and optoelectronics technologies, as well as suitable risk assessment of the uncertainties involved. For mission of high radiation levels, radiation-hardened integrated circuits will be required to preform critical mission functions. The most successful systems in space will be those that are best able to blend standard commercial electronics with custom radiation-hardened electronics in a mix that is suitable for the system of interest.

A new mode of operation for an ion mobility spectrometer (IMS) has been demonstrated that uses potential wells to trap and separate ions by their mobility. This mode of operation has been made feasible by the improvements in personal computers that now allow real-time control of the potentials on ring electrodes in the IMS drift tube. This mode of operation does not require a shutter grid and allows the accumulation of ions in the potential well to enhance the ion signal. Loss of ions from the potential well is controlled by the radial electric fields required by Gauss's law.