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Method of Making Integrated Circuits Using Ruthenium and its Oxides as a Cu Diffusion Barrier (open access)

Method of Making Integrated Circuits Using Ruthenium and its Oxides as a Cu Diffusion Barrier

Patent relating to a method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier.
Date: June 20, 2003
Creator: Chyan, Oliver M. R. & Ponnuswamy, Thomas
System: The UNT Digital Library