A high resolution photoconductivity investigation of two 13 -3 photon magneto-absorption (TPMA) in n-InSb (n - 9 x 10 cm ) has been performed. This is the first time that two-photon absorption in a semiconductor has been studied with cw lasers only. With a stable cw CC>2 laser and a highly sensitive sampling and magnetic field modulation technique, a minimum of 4 2 transitions in the TPMA photoconductivity spectra can be observed. Most of these transitions are a result of the usual spherical approximation TPMA selections rules (An =0, ±2; As = 0 for e ⊥ B and Δn = 0; Δs = 0 for e || B) . However, some transitions, in particular several near the TPMA band edge, are not explained by these rules. The TPMA spectra have been found to depend upon crystallographic orientation. This has not been previously observed. The temperature variation of the fundamental energy gap Eg between 2 and 100° K is also obtained from TPMA experiments.

Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.

This article discusses the thermal annealing behavior of an oxide layer under silicon.

Article discussing M-shell x-ray-production cross sections in thin targets of ₇₉Au, ₈₂Pb, ₈₃Bi, and ₉₂U by 0.3 - 2.6-MeV ₁⁴H+ and ₂⁴He+ ions.

A 10.6 ym C02 laser operating a power range S P 200 watts was used to pump some select vibrational transitions in the NO2 molecule while monitoring the rotational transitions (91/9—'100/10), (232f 22 ~~"*242,23> ' (402,38 "393,37) in the (0, 0, 0) vibrational level and the (8q,8—*"^1,7) rotational transition in the (0, 1, 0) vibrational level. These rotational transitions were monitored by microwave probing to determine how the population of states in the rotational manifolds were being altered by the laser. Coincidences between some components of the V3-V2 band of N02 and the C02 infrared laser lines in the 10 um region appeared to be responsible for the strong interaction between the continuous laser beams and the molecular states.

We present a comparative theoretical study of the transient grating coherent effects in resonant picosecond excitation-probe experiments. Signals in both the probe and conjugate directions are discussed. The effects of recombination, non-radiative scattering and spatial and orientational diffusion are included. The analysis is applied to both a molecular and to a semiconductor model. Signal contributions from concentration and orientational gratings are distinguished and their temporal natures discussed. The theory is used to explain our recent observations in germanium. Included are discussions of picosecond transient grating self-diffraction measurements that can be understood in terms of an orientational grating produced by anisotropic (in k-space) state-filling. Though there have been predictions and indirect experimental evidence for isotropic state-filling in germanium, this is the first direct experimental indication of anisotropic state-filling in a semiconductor.