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Selective H2 sensing using lanthanum doped zinc oxide thin film: A study of temperature dependence H2 sensing effect on carrier reversal activity
Article demonstrates a highly sensitive H₂ gas sensor using a lanthanum doped ZnO (La_ZnO) thin film operated at 300 °C. Pure and lanthanum doped (1–10 at. %) ZnO thin films were successfully synthesized using the sol-gel route.
Date:
September 4, 2020
Creator:
Zhang, Chen; Ju, Shuai; Zhang, Haifeng & Ghosh, Abhishek
System:
The UNT Digital Library