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Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS₂ Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
This article describes the performance of a multifaceted investigation comprising of atomic force microscopy (AFM0, photoluminescence (PL) and Raman spectroscopy to analyze the structural and chemical characteristics to help shed insights on the origins of the superior optoelectronic device performance.
Date:
February 23, 2017
Creator:
Saenz, Gustavo A.; Karapetrov, Goran; Curtis, James & Kaul, Anupama
System:
The UNT Digital Library