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Mn Interstitial Diffusion in (Ga, Mn)As (open access)

Mn Interstitial Diffusion in (Ga, Mn)As

This article describes a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga, Mn)As which explains the remarkably lard changes observed on low-temperature annealing.
Date: January 23, 2004
Creator: Edmonds, Kevin; Boguslawski, Piotr; Wang, K. Y.; Campion, Richard Paul; Novikov, Sergei; Farley, N. R. S. et al.
System: The UNT Digital Library
Rate constant for the reaction C₂H₅ + HBr → C₂H₆ + Br (open access)

Rate constant for the reaction C₂H₅ + HBr → C₂H₆ + Br

Article on the rate constant for the reaction C2H5 + HBr → C2H6 + Br.
Date: January 23, 2012
Creator: Golden, David M.; Peng, Jingping; Goumri, Abdellatif; Yuan, Jessie & Marshall, Paul
System: The UNT Digital Library