A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

In this invention, the efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga{sub 0.52}In{sub 0.48}P and GaAs. Additional lattice-matched systems to which the invention pertains include Al{sub x}Ga{sub l-x}/GaAs (x=0.3 {minus} 0.4), GaAs/Ge and Ga{sub y}In{sub 1-y}P/Ga{sub y+0.5}In{sub 0.5-{sub Y}} As (O<y<5).