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Setting-Basin Separating Device (open access)

Setting-Basin Separating Device

Patent for Settling Basin-Separating Devices. This device improves the issue of unwanted discharge shown in prior devices
Date: May 11, 1990
Creator: Allen, Charles
System: The Portal to Texas History
Method of solubilizing phthalocyanines and metallophthalocyanines (open access)

Method of solubilizing phthalocyanines and metallophthalocyanines

A one-step method of manufacturing soluble phthalocyanines and metallophthalocyanines, like zinc phthalocyanine, by converting a phthalocyanine or a metallophthalocyanine to a trialkylsilyl-substituted derivative is disclosed. The phthalocyanine or metallophthalocyanine is converted to a soluble trialkylsilyl-substituted derivative by interacting the phthalocyanine or metallophthalocyanine with an active metal amide, like lithium 2,2,6, 6-tetra-methylpiperidide, and a halotrialkylsilane, like chlorotrimethylsilane, to provide a phthalocyanine compound, like phthalocyanine monomers, dimers or polymers, metalated or unmetalated, that are soluble in organic media.
Date: June 1, 1990
Creator: Rathke, Jerome W.; Chen, Michael J. & Fendrick, Carol M.
System: The UNT Digital Library
Process of making cryogenically cooled high thermal performance crystal optics (open access)

Process of making cryogenically cooled high thermal performance crystal optics

A method for constructing a cooled optic wherein one or more cavities are milled, drilled or formed using casting or ultrasound laser machining techniques in a single crystal base and filled with porous material having high thermal conductivity at cryogenic temperatures. A non-machined strain-free single crystal can be bonded to the base to produce superior optics. During operation of the cooled optic, N{sub 2} is pumped through the porous material at a sub-cooled cryogenic inlet temperature and with sufficient system pressure to prevent the fluid bulk temperature from reaching saturation.
Date: June 29, 1990
Creator: Kuzay, Tuncer M.
System: The UNT Digital Library
Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy (open access)

Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

This invention is comprised of a method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.
Date: August 15, 1990
Creator: Brennan, T. M.; Hammons, B. E. & Tsao, J. Y.
System: The UNT Digital Library
Separation of Metals by Supported Liquid Membranes (open access)

Separation of Metals by Supported Liquid Membranes

A supported liquid membrane system for the separation of a preselected chemical species within a feedstream, preferably an aqueous feedstream, includes a feed compartment containing a feed solution having at least one preselected chemical species therein, a stripping compartment containing a stripping solution therein, and a microporous polybenzimidazole membrane situated between the compartments, the microporous polybenzimidazole membrane containing an extractant mixture selective for the preselected chemical species within the membrane pores is disclosed along with a method of separating preselected chemical species from a feedstream with such a system, and a supported liquid membrane for use in such a system.
Date: December 31, 1990
Creator: Takigawa, Doreen Y.
System: The UNT Digital Library
Method for Improving the Growth of Cadmium Telluride on a Gallium Arsenide Substrate (open access)

Method for Improving the Growth of Cadmium Telluride on a Gallium Arsenide Substrate

A method for preparing a gallium arsenide substrate, prior to growing a layer of cadmium telluride on a support surface thereof. The preparation includes the steps of cleaning the gallium arsenide substrate and thereafter forming prepatterned shapes on the support surface of the gallium arsenide substrate. The layer of cadmium telluride then grown on the prepared substrate results in dislocation densities of approximately 1{times}10{sup 6}/cm{sup 2} or less. The prepatterned shapes on the support surface of the gallium arsenide substrate are formed by reactive ion etching an original outer surface of the gallium arsenide substrate and into the body of the gallium arsenide substrate to a depth of at least two microns. The prepatterned shapes have the appearance of cylindrical mesas each having a diameter of at lease twelve microns. After the mesas are formed on the support surface of the gallium arsenide substrate, the substrate is again cleaned.
Date: December 31, 1990
Creator: Reno, John L.
System: The UNT Digital Library
Improved morphology in electrochemically grown conducting polymer films (open access)

Improved morphology in electrochemically grown conducting polymer films

A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventionally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol.
Date: December 31, 1990
Creator: Rubinstein, I.; Gottesfeld, S. & Sabatani, E.
System: The UNT Digital Library
Passive decay heat removal system for water-cooled nuclear reactors (open access)

Passive decay heat removal system for water-cooled nuclear reactors

This document describes passive decay-heat removal system for a water-cooled nuclear reactor which employs a closed heat transfer loop having heat-exchanging coils inside an open-topped, insulated evaporator located inside the reactor vessel, below its normal water level, in communication with a condenser located outside of containment and exposed to the atmosphere. The heat transfer loop is located such that the evaporator is in a position where, when the water level drops in the reactor, it will become exposed to steam. Vapor produced in the evaporator passes upward to the condenser above the normal water level. In operation, condensation in the condenser removes heat from the system, and the condensed liquid is returned to the evaporator. The system is disposed such that during normal reactor operations where the water level is at its usual position, very little heat will be removed from the system, but during emergency, low water level conditions, substantial amounts of decay heat will be removed.
Date: December 31, 1990
Creator: Forseberg, C. W.
System: The UNT Digital Library
Water and UV degradable lactic acid polymers (open access)

Water and UV degradable lactic acid polymers

A water and UV light degradable copolymer of monomers of lactic acid and a modifying monomer selected from the class consisting of ethylene and polyethylane glycols (PVB 6/22/90), propylene and and polypropylene (PVB 6/22/90) glycols, P-dioxanone, 1, 5 dioxepan-2-one, 1,4 -oxathialan-2-one, 1,4-dioxide and mixtures thereof. These copolymers are useful for waste disposal and agricultural purposes. Also disclosed is a water degradable blend of polylactic acid or modified polylactic acid and high molecular weight polyethylene oxide wherein the high molecular weight polyethylene oxide is present in the range of from about 2% by weight to about 50% by weight, suitable for films. A method of applying an active material selected from the class of seeds, seedlings, pesticides, herbicides, fertilizers and mixtures thereof to an agricultural site is also disclosed.
Date: June 26, 1990
Creator: Bonsignore, P. V. & Coleman, R. D.
System: The UNT Digital Library
Production of aluminum-26 (open access)

Production of aluminum-26

This invention is a method of producing Al-26 from potassium chloride by exposing it to a proton beam in order to break potassium and chlorine atoms into smaller pieces, which include Al-26. The Al-26 is isolated from the potassium chloride and substances produced by the beam by means of extraction and ion exchange.
Date: December 31, 1990
Creator: Steinkruger, F. J. & Phillips, D. R.
System: The UNT Digital Library
Process of making cryogenically cooled high thermal performance crystal optics (open access)

Process of making cryogenically cooled high thermal performance crystal optics

A method for constructing a cooled optic wherein one or more cavities are milled, drilled or formed using casting or ultrasound laser machining techniques in a single crystal base and filled with porous material having high thermal conductivity at cryogenic temperatures. A non-machined strain-free single crystal can be bonded to the base to produce superior optics. During operation of the cooled optic, N{sub 2} is pumped through the porous material at a sub-cooled cryogenic inlet temperature and with sufficient system pressure to prevent the fluid bulk temperature from reaching saturation.
Date: June 29, 1990
Creator: Kuzay, T. M.
System: The UNT Digital Library
Process for forming one or more substantially pure layers in substrate material using ion implantation (open access)

Process for forming one or more substantially pure layers in substrate material using ion implantation

The method comprises selecting an implantable element and a substrate material to be implanted which, at the implant/anneal temperatures, have limited mutual solubility and have no intermediate phases formed. In an example, Be is implanted with 11 {times}10{sup 17} Al/cm{sup 2} at 200 keV and then annealed for 1 h at 500 C. Rutherford backscattering shows that layer formation occurred during the anneal. SEM shows rectangular Be defects in the Al layer. Other examples of implantable elements and suitable substrate materials are tabulated. 6 figs, 1 table. (DLC)
Date: December 31, 1990
Creator: Musket, R. G.; Brown, D. W. & Munir, Z. A.
System: The UNT Digital Library
Supported liquid membrane system (open access)

Supported liquid membrane system

A cell apparatus for a supported liquid membrane including opposing faceplates, each having a spirally configured groove, an inlet groove at a first end of the spirally configured groove, and an outlet groove at the other end of the spirally configured groove, within the opposing faces of the faceplates, a microporous membrane situated between the grooved faces of the faceplates, said microporous membrane containing an extractant mixture selective for a predetermined chemical species within the pores of said membrane, means for aligning the grooves of the faceplates in an directly opposing configuration with the porous membrane being situated therebetween, such that the aligned grooves form a pair of directly opposing channels, separate feed solution and stripping solution compartments connected to respective channels between the faceplates and the membrane, separate pumping means for passing feed solution and stripping solution through the channels is provided.
Date: December 31, 1990
Creator: Takigawa, D. Y. & Bush, H. Jr.
System: The UNT Digital Library
Extrusion of metal oxide superconducting wire, tube or ribbon (open access)

Extrusion of metal oxide superconducting wire, tube or ribbon

A process and apparatus for extruding a superconducting metal oxide composition YBa{sub 2}Cu{sub 3}O{sub 7-x} provides a wire (tube or ribbon) having a cohesive mass and a degree of flexibility together with enhanced electrical properties. Wire diameters in the range of 6--85 mils have been produced with smaller wires on the order of 10 mils in diameter exhibiting enhanced flexibility for forming braided, or multistrand, configurations for greater current carrying capacity. The composition for extrusion contains a polymeric binder to provide a cohesive mass to bind the particles together during the extrusion process with the binder subsequently removed at lower temperatures during sintering. The composition for extrusion further includes a deflocculent, an organic plasticizer and a solvent which also are subsequently removed during sintering. Electrically conductive tubing with an inner diameter of 52 mil and an outer diameter of 87--335 mil has also been produced. Flat ribbons have been produced in the range of 10--125 mil thick by 100--500 mil wide. The superconducting wire, tube or ribbon may include an outer ceramic insulating sheath co-extruded with the wire, tubing or ribbon.
Date: December 31, 1990
Creator: Dusek, Joseph T.
System: The UNT Digital Library
High current pulse transmission cable (open access)

High current pulse transmission cable

This invention is comprised of a transmission cable for carrying high current pulses in which an even numbered plurality of electrical conductors surrounds a central ground conductor. Each electrical conductor is connected so that it at any instant in time it will carry current of opposite polarity to the polarity carried by adjacent conductors. This arrangement cancels practically all of the external fields generated by current in the conductors.
Date: September 28, 1990
Creator: Parsons, W. M.
System: The UNT Digital Library
Process for alloying uranium and niobium (open access)

Process for alloying uranium and niobium

Alloys such as U-6Nb are prepared by forming a stacked sandwich array of uranium sheets and niobium powder disposed in layers between the sheets, heating the array in a vacuum induction melting furnace to a temperature such as to melt the uranium, holding the resulting mixture at a temperature above the melting point of uranium until the niobium dissolves in the uranium, and casting the uranium-niobium solution. Compositional uniformity in the alloy product is enabled by use of the sandwich structure of uranium sheets and niobium powder.
Date: December 31, 1990
Creator: Holcombe, Cressie E.; Northcutt, Walter G.; Masters, David R. & Chapman, Lloyd R.
System: The UNT Digital Library
Electrical safety device (open access)

Electrical safety device

This invention consists of an electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and reset delay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.
Date: September 6, 1990
Creator: White, D. B.
System: The UNT Digital Library
Calcination and solid state reaction of ceramic-forming components to provide single-phase ceramic product having fine particle size (open access)

Calcination and solid state reaction of ceramic-forming components to provide single-phase ceramic product having fine particle size

The invention consists of an improved method for the preparation of single phase, fine grained ceramic materials from precursor powder mixtures where at least one of the components of the mixture is an alkali earth carbonate. The process consists of heating the precursor powders in a partial vacuum under flowing oxygen and under conditions where the partial pressure of CO{sub 2} evolved during the calcination is kept to a very low level relative to the oxygen. The process has been found particularly suitable for the preparation of high temperature copper oxide superconducting materials such as YBa{sub 2}Cu{sub 3}O{sub x} ``123`` and YBa{sub 2}Cu{sub 4}O{sub 8} ``124``.
Date: September 28, 1990
Creator: Balachandran, U.; Poeppel, R. B.; Emerson, J. E. & Johnson, S. A.
System: The UNT Digital Library
Silicon nitride reinforced with molybdenum disilicide (open access)

Silicon nitride reinforced with molybdenum disilicide

Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol%.
Date: December 31, 1990
Creator: Petrovic, John J. & Honnell, Richard E.
System: The UNT Digital Library
Production of hollow aerogel microspheres (open access)

Production of hollow aerogel microspheres

A method is described for making hollow aerogel microspheres of 800--1200{mu} diameter and 100--300{mu} wall thickness by forming hollow alcogel microspheres during the sol/gel process in a catalytic atmosphere and capturing them on a foam surface containing catalyst. Supercritical drying of the formed hollow alcogel microspheres yields hollow aerogel microspheres which are suitable for ICF targets.
Date: December 31, 1990
Creator: Upadhye, Ravindra S. & Henning, Sten A.
System: The UNT Digital Library
Method for preparing homogeneous single crystal ternary III-V alloys (open access)

Method for preparing homogeneous single crystal ternary III-V alloys

A method for producing homogenous single crystal III--V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition which would freeze into the desired crystal composition. The alloy of the floating crucible is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.
Date: August 14, 1990
Creator: Ciszek, T. F.
System: The UNT Digital Library
Highly conductive electrolyte composites and method of fabrication thereof (open access)

Highly conductive electrolyte composites and method of fabrication thereof

An electrolyte composite is manufactured by pressurizing a mixture of ionically conductive glass and an ionically conductive compound at between 12,000 and 24,000 pounds per square inch to produce a pellet. The resulting pellet is then sintered at relatively lower temperatures (800{degrees}C--1200{degrees}C), for example 1000{degrees}C, than are typically required (1400{degrees}C) when fabricating single constituent ceramic electrolytes. The resultant composite is 100 percent conductive at 250{degrees}C with conductivity values of 2.5 to 4 {times} 10{sup {minus}2} (ohm-cm){sup {minus}1}. The matrix exhibits chemical stability against sodium for 100 hours at 250 to 300{degrees}C.
Date: July 17, 1990
Creator: Hash, M. C. & Bloom, I. D.
System: The UNT Digital Library
Solid-state NMR imaging system (open access)

Solid-state NMR imaging system

An accessory for use with a solid-state NMR spectrometer includes a special imaging probe with linear, high-field strength gradient fields and high-power broadband RF coils using a back projection method for data acquisition and image reconstruction, and a real-time pulse programmer adaptable for use by a conventional computer for complex high speed pulse sequences.
Date: December 31, 1990
Creator: Gopalsami, N.; Dieckman, S. L. & Ellingson, W. A.
System: The UNT Digital Library
Selective epitaxy using the GILD process (open access)

Selective epitaxy using the GILD process

The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge{sub x}Si{sub 1-x} grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The …
Date: December 31, 1990
Creator: Weiner, K. H.
System: The UNT Digital Library