A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

In this invention, the efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga{sub 0.52}In{sub 0.48}P and GaAs. Additional lattice-matched systems to which the invention pertains include Al{sub x}Ga{sub l-x}/GaAs (x=0.3 {minus} 0.4), GaAs/Ge and Ga{sub y}In{sub 1-y}P/Ga{sub y+0.5}In{sub 0.5-{sub Y}} As (O<y<5).

A method is described for immobilizing waste chlorides salts containing radionuclides and hazardous nuclear material for permanent disposal, and in particular, a method for immobilizing waste chloride salts containing cesium, in a synthetic form of pollucite. The method for synthesizing pollucite from chabazite and cesium chloride includes mixing dry, non-aqueous cesium chloride with chabazite and heating the mixture to a temperature greater than the melting temperature of the cesium chloride, or above about 700 C. The method further comprises significantly improving the rate of retention of cesium in ceramic products comprised of a salt-loaded zeolite by adding about 10% chabazite by weight to the salt-loaded zeolite prior to conversion at elevated temperatures and pressures to the ceramic composite.

Patent for Settling Basin-Separating Devices. This device improves the issue of unwanted discharge shown in prior devices