In making this study it is important to search for ways to enhance and, if possible, make detection of MMO signals simpler in order that this technique for obtaining FS measurements may be extended to other materials. This attempt to improve measurement techniques has resulted in a significant discovery: the eddy-current techniques described in detail in a later section which should allow MMO to be observed and sensitively measured in many additional solids. The second major thrust of the study has been to use the newly discovered eddy-current technique in obtaining the first indisputable observation of MMO in zinc.

Electron densities and collision frequencies were obtained on a number of gases in a dc discharge at low pressures (0.70-2mm of Hg). These measurements were performed by microwave probing of a filament of the dc discharge placed coaxially in a resonant cavity operating in a TM₀₁₀ mode. The equipment and techniques for making the microwave measurements employing the resonant cavity are described. One of the main features of this investigation is the technique of differentiating the resonance signal of the loaded cavity in order to make accurate measurements of the resonant frequency and half-power point frequencies.

Exact solutions to Einstein's field equations in the presence of matter are presented. A one parameter family of interior solutions for a static fluid is discussed. It is shown that these solutions can be joined to the Schwarzschild exterior, and hence represent fluid spheres of finite radius. Contained within this family is a set of solutions which are gaseous spheres defined by the vanishing of the density at the surface. One such solution yields an analytic expression which corresponds to the asymptotic numerical solution of Oppenheimer and Volkoff for the degenerate neutron gas. These gaseous spheres have ratios of specific heats that lie between one and two in the vicinity of the origin, increasing outward, but remaining less than the velocity of light throughout.

The effects of optical heating via infrared free carrier absorption on the electron magneto-transport properties of n-InSb at helium temperatures have been studied for the first time. Oscillatory photoconductivity (OPC) type structure is seen in the photon energy dependence of the transport properties. A C0₂ laser (hω = 115 to 135 meV) was used as the optical source. Concentrations between 1 x 10¹⁵ cm⁻³ and 2 x 10¹⁶ cm⁻³ were studied. The conclusions of this study are that the energy relaxation of high energy photoexcited electrons, generated by free carrier absorption of C0₂ laser radiation in degenerate n-InSb at liquid helium temperatures, is by emission of a maximum number of optical phonons, and that this relaxation mechanism produces OPC type structure in the photon energy dependence of the electron temperature of the conduction band electron gas. This structure is seen, therefore, in the transport properties of the sample, including the Shubnikovde Haas effect, the effective absorption coefficient, and the photoconductivity (mobility) response (lower concentrations only). In addition, the highest concentration studied, nₑ = ~2 x 10¹⁶ cm⁻³, sets an experimental lower limit on the concentration at which electron-electron scattering will become the dominant energy relaxation mechanism for the photoexcited electrons, …

Measurement of the line width parameters of a molecule is of interest because collision diameters can be calculated from them. This gives an effective size of the molecule when it is involved in interactions with other molecules. Further, specific types of interactions can be inferred from detailed information about the dependence of the line width upon pressure. In this paper, an experiment for measuring line width parameters for methyl cyanide is described and the results of the experiment are analyzed. This investigation was successful in obtaining precise values for the line width parameter for the J-J' = 0-1, J-J'= 1-2, and J-J' = 2-3 transitions of methyl cyanide which agree with experimental values of other researchers where available. It was found that standing waves were the dominant effect in the measurement of center frequency shift.

The origin of the Shubnikov-de Haas effect, the strain theory developed by Bir and Pikus, and a simple, classical beating-effects model are discussed. The equipment and the experimental techniques used in recording the Shubnikov-de Haas oscillations of n-type indium antimonite are described. The analysis of the experimental data showed that the angular anisotropy of the period of SdH oscillations at zero stress was unmeasurable for low concentration samples as discussed by other workers. Thus the Fermi surfaces of InSb are nearly spherical at low concentration. It was also shown that the Fermi surface of a high concentration sample of InAs is also nearly spherical. The advantages of using the magnetic field modulation and phase sensitive detection techniques in determining the beats are given. The simple, classical beating-effects model is able to explain the experimental beating effect data in InSb. The computer programs used to obtain the theoretical values of the beat nodal position, SdH frequencies, average frequency, the Fermi surface contours, and the energy eigenvalues are given.

The finite lifetime of the bound roton pair is included in the theoretical light scattering cross section to explain the shape of the peak in the observed Raman light scattering cross section in He II. A model Hamiltonian is used to describe interactions between quasiparticles for the helium system. The equation of motion for the bound roton pair state, which is taken to be a collective mode of quasiparticle pairs, is solved. The cross section for light scattering is then derived using Fermi's Golden Rule with the bound roton pair as the final state. Since the bound roton pair can decay into two free phonons, a phenomenological width r is included in the cross section. The peak position and shape of the observed cross section are both fitted using a binding energy of εB = 0.37 K for the bound roton pair.

Thin target L-Shell x-ray production cross sections for protons incident on ₆₂Sm and ₇₀Yb in the energy range of 0.3 to 2.4 MeV/amu, alpha particles incident on ₆₂Sm, ₇₀Yb, and ₈₂Pb in the energy range of 0.15 to 4.8 MeV/amu, and lithium ions incident on ₅₈Ce, ₆₀Nd, ₆₂Sm, ₆₆Dy, ₆₇Ho, ₇₀Yb, and ₈₂Pb in the energy range of 0.8 to 4.4 MeV/amu have been measured. The cross section data have been compared to the planewave Born approximation (PWBA) and the PWBA modified to include binding energy and Coulomb deflection effects. The Lα₁,₂ x-ray production cross sections are best represented by the PWBA modified to include both the binding energy and Coulomb deflection effects (PWBA-BC) over the entire incident ion, incident energy, and target ranges studied. However, the Lγ₁ and Lγ₂,₃,₍₆₎ x-ray production cross sections are best represented by the PWBA except at the lower ion energies, where both the PWBA and PWBA-BC are in disagreement with the data. The comparison of Lα₁,₂/Lγ₂,₃,₍₆₎ ratios to theory reveals that the PWBA-BC does not predict the inflection point substantiated by the data, and the agreement between the data and the PWBA-BC becomes worse as the atomic number of the incident ion increases. Comparison …

The problem with which this investigation is concerned is that of making experimental measurements of proton-induced K-shell x-ray production cross sections and to study the dependence of these cross sections upon the energy of the incident proton. The measurements were made by detection of the characteristic x-rays emitted as a consequence of the ionization of the K-shell of the atom. The method for relating this characteristic x-ray emission to the x-ray production cross section is discussed in this work.

The Shubnikov-de Haas effect is an oscillation in the electrical resistivity or conductivity of a metal, semimetal, or semiconductor as a function of changing magnetic field which occurs at low temperatures. The effect is caused by the quantization of the momentum and energy of the charge carriers by the magnetic field. Since the nature of the oscillation depends strongly on the energy band structure of the material in which it is measured, the effect could be quite useful as an investigative tool. Its usefulness has been limited, however, by the uncertainty as to the functional form of the relationship between the measured oscillations and the parameters characterizing the material. One purpose of the present study is to extend the usefulness of the Shubnikov-de Haas effect by experimentally determining the functional form appropriate for a material such as n-type indium antimonide. The second purpose of the study is to determine values for the parameters which characterize the band structure of indium antimonide. The curve fitting procedure is found to be a powerful tool for investigating band structure. All computer programs used in processing the data, fitting the data, and comparing the results with the Kane model are given.

K-Shell ionization cross section for protons over the energy range of 0.4 to 2.0 MeV have been measured on thin targets of the elements Se, Br, Rb, Sr, Y, Mo and Pd. Total x-ray and ionization cross sections for the K-shell are reported. The experimental values of the ionization cross sections are compared to the non-relativistic plane-wave Born approximation, the binary-encounter approximation, the constrained binary-encounter approximation, and the plane-wave Born approximation with corrections for Coulomb-deflection and binding energy effects.

Line width parameters for a number of spectral lines in the pure rotational spectrum of formaldehyde (CH20) and formic acid (HCOOH) have been measured using a sourcemodulated microwave spectrograph. All transitions studied in this investigation were of the type ΔJ=O (i.e. Q-branch transitions), with ΔK-1=0 and ΔK+1 =+l. The center frequencies of the measured lines varied from 8662.0 MHz to 48612.70 MHz. The experimentally determined collision diameters for self broadening interactions involving HCOOH and CH2 Q molecules were found to be 2 - 27 per cent less than those calculated by the Murphy-Boggs theory of collision broadening. Much better agreement between a simplified broadening scheme for symmetric top molecules and the observed foreign-gas collision diameters is obtained by using Birnbaum's theory.

The problem with which this investigation is concerned is that of determining the steady-state and dynamic characteristics of the admittance of a metallic probe immersed in a laboratory plasma which has the low electron densities and low electron temperatures characteristic of the ionospheric plasma. The problem is separated into three related topics: the design and production of the laboratory plasma, the measurement of the steady-state properties of dc and very low frequency probe admittance, and the study of transient ion sheath effects on radio frequency probe admittance.

Many solids have Fermi surfaces which are approximated as ellipsoids. A comprehensive solution for the magnetoconductivity of an ellipsoid is obtained which proves the existence of a relaxation time tensor which can be anisotropic and which is a function of energy only.

The purpose of this study is two-fold. The first is to determine the dependence of the molecular ion profiles on the various ionospheric and atmospheric parameters that affect their distributions. The second is to demonstrate the correlation of specific ionospheric parameters with 6300 Å nightglow intensity during periods of magnetically quiet and disturbed conditions.

Resonant cavity controlled klystron frequency stabilization circuits and quartz-crystal oscillator frequency stabilization circuits were investigated for reflex klystrons operating at frequencies in the X-band range. The crystal oscillator circuit employed achieved better than 2 parts in 10 in frequency stability. A test of the functional properties of the frequency standard was made using the Stark effect in molecules.

An expression for the dielectric susceptibility tensor of a cubic ionic crystal has been derived using the classical Liouville operator. The effect of cubic anharmonic forces is included as a perturbation on the harmonic crystal solution, and a series expansion for the dielectric susceptibility is developed. The most important terms in the series are identified and summed, yielding an expression for the complex susceptibility with an anharmonic contribution which is linearly dependent on temperature. A numerical example shows that both the real and imaginary parts of the susceptibility are continuous, finite functions of frequency.

The Feynman path integral formulation of quantum mechanics is a path integral representation for a propagator or probability amplitude in going between two points in space-time. The wave function is expressed in terms of an integral equation from which the Schrodinger equation can be derived. On taking the limit h — 0, the method of stationary phase can be applied and Newton's second law of motion is obtained. Also, the condition the phase vanishes leads to the Hamilton - Jacobi equation. The secondary objective of this paper is to study ways of relating quantum mechanics and classical mechanics. The Ehrenfest theorem is applied to a particle in an electromagnetic field. Expressions are found which are the hermitian Lorentz force operator, the hermitian torque operator, and the hermitian power operator.

The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for some materials, no value has ever been reported for InSb. The methods presented in this paper allow a value of the splitting parameter to be determined for InSb.

The frequency shifts and Q changes of a resonant microwave cavity were utilized as a basis for determining microwave properties of solids and liquids. The method employed consisted of varying the depth of penetration of a cylindrical sample of the material into a cavity operating in the TM0 1 0 Mode. The liquid samples were contained in a thin-walled quartz tube. The perturbation of the cavity was achieved by advancing the sample into the cavity along the symmetry axis by employing a micrometer drive appropriately calibrated for depth of penetration of the sample. A differentiation method was used to obtain the half-power points of the cavity resonance profile at each depth of penetration. The perturbation techniques for resonant cavities were used to reduce the experimental data obtained to physical parameters for the samples. The probing frequency employed was near 9 gHz.

Supersaturated substitutional alloys formed by ion implantation and rapid liquid-phase epitaxial regrowth induced by pulsed-laser annealing have been studied using Rutherford-backscattering and ion-channeling analysis. A series of impurities (As, Sb, Bi, Ga, In, Fe, Sn, Cu) have been implanted into single-crystal (001) orientation silicon at doses ranging from 1 x 10^15/cm2 to 1 x 10^17/cm2. The samples were subsequently annealed with a Ω-switched ruby laser (energy density ~1.5 J/cm2, pulse duration 15 x 10-9 sec). Ion-channeling analysis shows that laser annealing incorporates the Group III (Ga, In) and Group V (As, Sb, Bi) impurities into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing. The maximum Group III and Group V dopant concentrations that can be incorporated into substitutional lattice sites are determined for the present laser-annealing conditions. Dopant profiles have been measured before and after annealing using Rutherford backscattering. These experimental profiles are compared to theoretical model calculations which incorporate both dopant diffusion in liquid silicon and a distribution coefficient (k') from the liquid. It is seen that a distribution coefficient (k') far greater than the equilibrium value (k0) is required for …

The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss. The net concentration of hole carriers decreases and then increases exponentially with stress at 77 k and 64 k, while at 12 k there is only a monotonic increase of carrier concentration with stress. Analysis of the hole concentration as a function of stress shows the presence of a deep acceptor level located about 90 meV above the valence band edge in additionb to the 10 meV vadmium acceptor level. The shallow acceptor level does not split with stress. The hole density data is represented very well by models which describe both the variation in the net density of states and motion of the acceptor levels as a function of stress.

The object of this paper is to derive Landau's theory of quantized hydrodynamics from the many-particle Schroedinger equation. Landau's results are obtained, together with an additional term in the Hamiltonian.

The present investigation was prompted by several considerations. In previous studies there was considerable variance with regard to the reported values for the half-lives of the isomeric and ground states in 164 Ho. There was also considerable variance with regard to the values reported for the branching ratios and the relative intensities of the transitions. Thus a further study of the problem was needed.