A self stabilized, free standing, z-pinch plasma channel has been proposed to deliver the high intensity heavy ion beam from the end of a driver to the fuel target in a heavy ion inertial fusion power plant. The z-pinch relaxes emittance and energy spread requirements requiring a lower cost driver. A z-pinch transport would reduce the number of beam entry port holes to the target chamber from over a hundred to four as compared to neutralized ballistic focusing thus reducing the driver hardware exposure to neutron flux. Experiments where a double pulse discharge technique is used, z-pinch plasma channels with enhanced stability are achieved. Typical parameters are 7 kV pre-pulse discharge and 30 kV main bank discharge with 50 kA of channel current in a 7 torr background gas atmosphere. This work is an experimental study of these plasma channels examining the relevant physics necessary to understand and model such plasmas. Laser diagnostics measured the dynamical properties of neutrals and plasma. Schlieren and phase contrast techniques probe the pre-pulse gas dynamics and infrared interferometry and faraday effect polarimetry are used on the z-pinch to study its electron density and current distribution. Stability and repeatability of the z-pinch depend on the …

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity …