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This thesis consists of three main parts. The first one relates to boron neutron capture therapy. It summarizes the guidelines obtained by numerical simulations for the treatment of shallow and deep-seated brain tumors, as well as the results on the design of beam-shaping assemblies to moderate D-D and D-T neutrons to epithermal energies. The second part is about boron neutron capture synovectomy for the treatment of rheumatoid arthritis. Optimal neutron energy for treatment and beam-shaping assembly designs are summarized in this section. The last part is on the development of the sealed neutron generator, including experimental results on the prototype ion source and the prototype accelerator column.

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at …

Helium, with its two electrons and one nucleus, is a three-body system. One of the models for investigating correlated electron motion in this system is autoionization, produced via double excitation of the electrons. Predictions about the autoionization spectrum of helium have differed from each other and from preliminary experimental data. However, previous experiments have not been able to distinguish among the theoretical predictions because their energy resolution is not high enough to resolve the narrow linewidths of quasi-forbidden peaks and the resonances that appear in the highest excited states. Consequently, a team of researchers at Lawrence Berkeley National Laboratory have embarked on a project for building a high-resolution Fourier-Transform Soft X-ray (or VUV) interferometer (FTSX) to provide definitive data to answer remaining questions about the autoionization spectrum of helium. The design and construction of this interferometer is described in detail below, including the use of a flexure stage to provide the large path length difference necessary for high resolution measurements, the manufacture of x-ray beamsplitters, a description of the software, and the solution to the problems of stick-slip, vibration, and alignment. Current progress of its development is also described, as well as future goals.