The authors measure the time-dependent CP asymmetry parameters in B{sup 0} {yields} K{sup +}K{sup -}K{sup 0} based on a data sample of approximately 277 million B-meson pairs recorded at the {Upsilon}(4S) resonance with the BABAR detector at the PEP-II B-meson Factory at SLAC. They reconstruct two-body B{sup 0} decays to {phi}(1020)K{sub s}{sup 0} and {phi}(1020)K{sub L}{sup 0}. Using a time-dependent maximum-likelihood fit, they measure sin2{beta}{sub eff}({phi}K{sup 0}) = 0.48 {+-} 0.28 {+-} 0.10, and C({phi}K{sup 0}) = 0.16 {+-} 0.25 {+-} 0.09, where the first error is statistical, and the second is systematic. They also present measurements of the CP-violating asymmetries in the decay B{sup 0} {yields} f{sub 0}({yields} {pi}{sup +}{pi}{sup -})K{sub s}{sup 0}. The results are obtained from a data sample of 209 x 10{sup 6} {Upsilon}(4S) {yields} B{bar B} decays, also collected with the BABAR detector at the PEP-II asymmetric-energy B Factory at SLAC. From a time-dependent maximum-likelihood fit they measure the mixing-induced CP violation parameter S(f{sub 0}(980)K{sub S}{sup 0}) = - sin 2{beta}{sub eff}f{sub 0}(980)K{sub S}{sup 0} = -0.95{sub -0.23}{sup +0.32} {+-} 0.10 and the direct CP violation parameter C(f{sub 0}(980)K{sub S}{sup 0}) = - 0.24 {+-} 0.31 {+-} 0.15, where the first errors are statistical and …

As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O{sub 2}{sup +}, BF{sub 2}{sup +}, P{sup +} etc., for surface modification and doping applications. With optimized source condition, around 85% of BF{sub 2}{sup +}, over 90% of O{sub 2}{sup +} and P{sup +} have been achieved. The brightness of the multicusp-plasma ion source is a key issue for …