Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma processing. Several techniques have been suggested to mitigate process damage but supercritical silylation offers a rapid single repair step solution to this problem. Different ash and etch damaged samples were employed in this study to optimize an effective method to repair the low-k dielectric material and seal the surface pores via supercritical fluid processing with various trialkylchlorosilanes. Fourier transform infrared spectroscopy (FTIR), contact angle, capacitance- voltage measurements, and x-ray photoemission spectroscopy, dynamic secondary ion mass spectroscopy (DSIMS), characterized the films. The hydrophobicity and dielectric constant after exposure to elevated temperatures and ambient conditions were monitored and shown to be stable. The samples were treated with a series of silylating agents of the form R3-Si-Cl where R is an alkyl groups (e.g. ethyl, propyl, isopropyl). Reactivity with the surface hydroxyls was inversely …

One of the final steps in fabricating microelectromechanical devices often involves a liquid etch release process. Capillary forces during the liquid evaporation stage after the wet etch process can pull two surfaces together resulting in adhesion of suspended microstructures to the supporting substrate. This release related adhesion can greatly reduce yields. In this report, a wet etch release method that uses polystyrene microspheres in the final rinse liquid is investigated. The polystyrene microspheres act as physical barriers between the substrate and suspended microstructures during the final liquid evaporation phase. A plasma ashing process is utilized to completely remove the polystyrene microspheres from the microstructure surfaces. Using this process, release yields > 90% were achieved. It is found that the surface roughness of gold surfaces increases while that of the silicon is reduced due to a thin oxide that grows on the silicon surface during the plasma process.

The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.

Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.

Recent progress in layered transition metal dichalcogenides (TMDs) has led to various promising electronic and optoelectronic applications. However, the structure of materials plays a critical role in electronic and optoelectronic devices, and determines performance. Electronic and optoelectronic devices typically consist of multiple layers that form electrical homojunctions or heterojunctions. Therefore, in a device it can be expected that a WS2 layer may serve as the substrate for a subsequent layer in a multilayer device stack and determine how the layer grows. In transistor structures, roughness at the channel/gate dielectric interface introduces field variations and charge scattering. Therefore, understanding the relations between processing, surface morphology and properties is important. In this project, the effects of pulsed laser deposition (PLD) processing conditions on the surface morphology of few layered WS2 films were studied. WS2 films were synthesized under processing conditions that represent the extremes of surface supersaturation and kinetic energy transfer from the flux to the growing films, and evolution of the surface morphology was studied. The specific conditions were 1Hz/50mJ, 10Hz/50mJ, 1Hz/300mJ, and 10Hz/300mJ respectively. Combining AFM, XRD and Raman analyses, it was determined that deposition at 10Hz/300mJ, provided the best structural properties and surface morphology. Growth appeared to be 3D-cluster, …